Paper Titles

High Resolution Deep Level Transient Spectroscopy of Hydrogen Interactions with Ion Implantation-Induced Defects in Silicon
p.135

Depth Resolved Defect Analysis by Micro-Raman Investigations of Plasma Hydrogenated Czochralski Silicon Wafers
p.141

Casting Technologies for Solar Silicon Wafers: Block Casting and Ribbon-Growth-on-Substrate
p.149

Silicon Ribbons for Solar Cells
p.159

Metal Content of Multicrystalline Silicon for Solar Cells and its Impact on Minority Carrier Diffusion Length
p.175

Carbon-Induced Twinning in Multicrystalline Silicon
p.181

Light-Induced Degradation in Crystalline Silicon Solar Cells
p.187

Estimation of the Upper Limit of the Minority-Carrier Diffusion Length in Multicrystalline Silicon: Limitation of the Action of Gettering and Passivation on Dislocations
p.197

Minority Carrier Diffusion Lengths in Multi-Crystalline Silicon Wafers and Solar Cells
p.205

HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Metal Content of Multicrystalline Silicon for...

Metal Content of Multicrystalline Silicon for Solar Cells and its Impact on Minority Carrier Diffusion Length

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology X

Info:

Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

175-180

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.175

Citation:

Cite this paper

Online since:

September 2003

Authors:

Andrei A. Istratov, Tonio Buonassisi, R.J. McDonald, A.R. Smith, R. Schindler, James Rand, Juris P. Kalejs, Eicke R. Weber

Keywords:

Chromium, Cobalt, Copper (Cu), Gettering, Gold, Iron, Molybdenum, Multicrystalline Silicon, Neutron Activation Analysis, Nickel Ni, Solar Cell

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] D. Macdonald, A. Cuevas, A. Kinomura, and Y. Nakano, in: 29th Photovoltaic Specialists Conference, (IEEE, New Orleans, LA, 2002), 285.

[2] J. Bailey and E.R. Weber: phys. stat. sol. (a) 137 (1993) 515.

[3] S.A. McHugo, J. Bailey, H. Hieslmair, and E.R. Weber: J. Electron. Materials 25 (1994) 1417.

[4] S.A. McHugo, A.C. Thompson, I. Perichaud, and S. Martinuzzi: Appl. Phys. Lett. 72 (1998) 3482.

[5] S.A. McHugo, A.C. Thompson, G. Lamble, C. Flink, and E.R. Weber: Physica B 273-274 (1999) 371.

DOI: 10.1016/s0921-4526(99)00480-9

[6] S.A. McHugo, A.C. Thompson, A. Mohammed, G. Lamble, I. Perichaud, S. Martinuzzi, M. Werner, M. Rinio, W. Koch, and H.U. Hoefs, C. Haessler: J. Appl. Phys. 89 (2001) 4282.

DOI: 10.1063/1.1330552

[7] S.A. McHugo, A. Mohammed, A.C. Thompson, B. Lai, and Z. Cai: J. Appl. Phys. 91 (2002) 6396.

[8] A.R. Smith, R.J. McDonald, H. Manini, D.L. Hurley, E.B. Norman, M.C. Vella, and R.W. Odom: J. Electrochem. Soc. 143 (1996) 339.

[9] A.A. Istratov, H. Hieslmair, and E.R. Weber: Appl. Phys. A 70 (2000) 489.

[10] J.R. Davis, A. Rohatgi, R.H. Hopkins, P.D. Blais, P. Rai-Choudhury, J.R. McCormic, and H.C. Mollenkopf: IEEE Trans. Electron. Dev. ED-27 (1980) 677.

DOI: 10.1109/t-ed.1980.19922

[11] R.H. Hopkins and A. Rohatgi: J. Cryst. Growth 75 (1985) 67.

[12] A.A. Istratov, H. Hedemann, M. Seibt, O.F. Vyvenko, W. Schröter, T. Heiser, C. Flink, H. Hieslmair, and E.R. Weber: J. Electrochem. Soc. 145 (1998) 3889.

DOI: 10.1149/1.1838889

[13] A.A. Istratov and E.R. Weber: Appl. Phys. A 66 (1998) 123.

[14] F. Riedel and W. Schröter: Phys. Rev. B 62 (2000) 7150.

[15] M. Kittler, J. Larz, W. Seifert, M. Seibt, and W. Schröter: Appl. Phys. Lett. 58 (1991) 911.

[16] P.S. Plekhanov, R. Gafiteanu, U.M. Gosele, and T.Y. Tan: J. Appl. Phys. 86 (1999) 2453.