Nitrogen Diffusion and Interaction with Oxygen in Si
p.83
p.83
Structure and Electronic Properties of Nitrogen Defects in Silicon
p.93
p.93
Characterization of Nucleation Sites in Nitrogen Doped Czochralski Silicon by Density Functional Theory and Molecular Mechanics
p.99
p.99
Processing and Characterization of 300 mm Argon-Annealed Wafers
p.105
p.105
Thermal Stability of Oxygen Precipitates in Nitrogen-Doped Czochralski Silicon
p.111
p.111
Nitrogen Out-Diffusion from Czochralski Silicon Monitored by Depth Profiles of Shallow Thermal Donors
p.117
p.117
Vibrational Lifetimes of Hydrogen and Silicon MOSFET Reliability
p.123
p.123
Influence of Hydrogen on the Formation of Interstitial Agglomerates in Silicon
p.129
p.129
High Resolution Deep Level Transient Spectroscopy of Hydrogen Interactions with Ion Implantation-Induced Defects in Silicon
p.135
p.135
Thermal Stability of Oxygen Precipitates in Nitrogen-Doped Czochralski Silicon
Abstract:
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Periodical:
Solid State Phenomena (Volumes 95-96)
Pages:
111-116
Citation:
Online since:
September 2003
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© 2004 Trans Tech Publications Ltd. All Rights Reserved
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