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HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Characterization of Nucleation Sites in Nitrogen...

Characterization of Nucleation Sites in Nitrogen Doped Czochralski Silicon by Density Functional Theory and Molecular Mechanics

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Gettering and Defect Engineering in Semiconductor Technology X

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

99-104

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.99

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Online since:

September 2003

Authors:

F. Sahtout Karoui, A. Karoui, George A. Rozgonyi, M. Hourai, Koji Sueoka

Keywords:

Ab Initio, Atomic Structure, Barrier, CZ Si, Density Function Theory (DFT), Formation Energy, FZ Si, Molecular Mechanics, N₂, Nitrogen Doped Silicon, NO Complex, Potential Well, Stability, V₂N₂, VN₂, V-N-O

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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