Characterization of Nucleation Sites in Nitrogen Doped Czochralski Silicon by Density Functional Theory and Molecular Mechanics

Abstract:

Article Preview

Info:

Periodical:

Solid State Phenomena (Volumes 95-96)

Edited by:

H. Richter and M. Kittler

Pages:

99-104

Citation:

F. Sahtout Karoui et al., "Characterization of Nucleation Sites in Nitrogen Doped Czochralski Silicon by Density Functional Theory and Molecular Mechanics", Solid State Phenomena, Vols. 95-96, pp. 99-104, 2004

Online since:

September 2003

Export:

Price:

$38.00

[1] T. Abe, T. Masui, H. Harada, J. Chikawa, VLSI Science and Technology 1985, Eds., W.M. Bullis and S. Broydo, 543-550 (1985).

[2] W. v. Ammon, P. Dreier, W. Hensel, U. Lambert, L. Koster, Mater. Sci. and Eng., B36, 33 (1996).

[3] M. Tamatsuka, N. Kobayashi, S. Tobe; T. Masui, ECS PV. 99-1, p.456 (1999).

[4] M.W. Qi, S.S. Tan, B. Zhu, P.X. Cai, W.F. Gu, X.M. Xu, T.S. Shi, D.L. Que, L.B. Li, J. Appl. Phys., 69, (6), 3775 (1991).

[5] D. Yang, D. Que, K. Sumino, Stat. Sol. (B), 210, 295 (1998).

[6] M. Suezawa, K. Sumino, H. Harada, T. Abe, Jpn. J. Appl. Phys., L859 (1986).

[7] H. J. Stein, Appl. Phys. Lett., 43 (3), 296 (1983).

[8] H.J. Stein, Mat. Res. Soc. Symp. Proc., Vol. 59, p.523 (1986).

[9] R. Jones, S. Oberg, F. B. Rasmussen, B. B. Nielsen, Phys. Rev. B, 72, 1882 (1994).

[10] F. Quast, P. Pichler, H. Ryssel, R. Falster, ECS PV. 2000-17, Eds., C. L. Claeys, P. RaiChoudhury, M. Watnabe, P. Stallhofer, H. J. Dawson, p.156 (2000).

[11] A. Karoui, F.S. Karoui, A. Kvit, G.A. Rozgonyi, and D. Yang, Appl. Phys. Lett., 80, 12, 2114, (2002).

[12] K. Nakai, Y. Inoue, H. Yokota, A. Ikari, J. Takahashi, A. Tachikawa, K. Kitahara, Y. Ohta, W. Ohashi, J. Appl. Phys., 89, 4301 (2001).

[13] F.B. Rasmussen, S. Öberg,R. Jones,C. Ewels,J. Goss,J. Miro, P. Deák, Mat. Sc. Eng., B36, 91 (1996).

[14] J. Couhinto and R. Jones, P. R. Briddon, S. Öberg, Phys. Rev. B, 62 (16), 10824 (2000).

[15] H. Sawada and K. Kawakami, Physical Review B, 62 (3), 1851 (2000).

[16] H. Kageshima, et al., Appl. Phys. Lett., 76, 3718 (2000).

[17] A. Umerski and R. Jones, Phil. Mag. A 67, 4, 905-915 (1993).

[18] W. Kohn and L. J. Sham, Phys. Rev. A, 140, 1133 (1965).

[19] J. Harris, Phys. Rev. B 31, 1770 (1985).

[20] S. H. Vosko, L. Wilk, M. Nusair, Can. J. Phys., 58, 1200 (1980).

[21] C. S. Nichols, C. G. Van de Walle, and S. T. Pantelides, Phys. Rev. B, 40 (8), 5484 (1989).

[22] A Karoui, F.S. Karoui, G.A. Rozgonyi, M. Hourai, and K. Sueoka, accepted in J. Electrochem. Soc.

[23] D.R. Bosomworth et al., Proc. Roy. Soc. A, 317 (1528), 133 (1970).

[24] R. Jones and A. Umerski, Physical Review B, 45 (19), 11321 (1992).

[25] G. A. Rozgonyi, A. Karoui, A. Kvit, G. Duscher, Microelectronic Engineering 1, 3206 (2002).

[26] A. Karoui, F. Sahtout Karoui, G. A. Rozgonyi, submitted to J. Appl. Phys.

[27] V. V. Voronkov and R. Falster, J. Electrochem. Soc., 149 (3), G167-G174 (2002).

Fetching data from Crossref.
This may take some time to load.