Nitrogen Diffusion and Interaction with Oxygen in Si

Abstract:

• Periodical: Solid State Phenomena (Volumes 95-96)
• Pages: 83-92
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.95-96.83
• Online since: September 2003
• Authors: Vladimir V. Voronkov, Robert J. Falster
• Keywords: Diffusion, Dissociation, Nitrogen, Oxygen, Silicon

References

[1] T. Abe and H. Takeno, Mater. Res. Soc. Symp. Proc., 262, 3 (1992).

[2] W. von Ammon, P. Drier, W. Hensel, U. Lambert ands L. Kostler, Mater. Sci. Eng. B, 36, 33 (1996).

[3] K. Nakamura, T. Saishoji, S. Togawa, J. Tomioka, Proc. Kazusa Academia Park Forum on the Science and Technology of Silicon Materials, Japan Tech. Inform. Service, p.116 (1999).

[4] K. Nakai, Y. Inoue, H. Yokota, A. Ikari, J. Takahashi, A. Tachikawa, K. Kitahara, Y. Ohta and W. Ohasi, J. Appl. Phys., 80, 4301 (2001).

[5] K. Sumino, I, Yonenaga, M. Imai and T. Abe, J. Appl. Phys., 54, 5016 (1983).

[6] T.S. Chao, M.C. Liaw, C.H. Chu, C.Y. Chang, C.H. Chien, C.P. Hao and T.F. Lei, Appl. Phys. Lett., 69, 1781 (1996).

[7] M. Suezawa, K. Sumino, H. Harada and T. Abe, Jpn. J. Appl. Phys., Part 1, 25, L859 (1986).

[8] D. Yang, R. Fan, L. Li, D. Que and K. Sumino, Appl. Phys. Lett., 68, 487 (1996).

[9] V.V. Voronkov, M. Porrini, P. Collareta, M.G. Pretto, R. Scala, R. Falster, G.I. Voronkova, A.V. Batunina, V.N. Golovina, L.V. Arapkina, A.S. Guliaeva and M.G. Milvidski, J. Appl. Phys., 89, 4289 (2001).

DOI: 10.1063/1.1356436

[10] K.L. Brower, Phys. Rev. B, 26, 6040 (1982).

[11] T. Abe, H. Harada, N. Ozawa and K. Adomi, Mater. Res. Soc. Symp. Proc., 59, p.537 (1986).

[12] K. Kakumoto and Y. Takano, Proc. 2-nd International Symp. On Advanced Science and Technology of Silicon Materials, (Kona Hawaii), p.437 (1996).

[13] H.J. Stein, Mater. Res. Soc. Symp. Proc., 59, 523 (1986).

[14] R. Jones, S. Oberg, F. Berg-Rasmussen and B.B. Nielsen, Phys. Rev. Lett., 72, 1882 (1994).

[15] V.V. Voronkov and R. Falster, J. Electrochem. Soc. 149, G167 (2002).

[16] H. Sawada and K. Kawakami, Phys. Rev. B, 62, 1851 (2000).

[17] A. Gali, J. Miro, P. Deak, C.P. Ewels and R. Jones, J. Phys. Condens. Matter, 8, 7711 (1996).

[18] R.S. Hockett, Appl. Phys. Lett., 54, 1793 (1989).

[19] G. Mannino, V. Privitera, S. Scalese, E. Napolitani, P. Pichler and N.E.B. Cowern, submitted to Appl. Phys. Letters (2003).

[20] P. Wagner, R. Oeder and W. Zulener, Appl. Phys. A, 46, 73 (1988).

[21] J.L. Libbert, L. Mule'Stagno and M. Banan, J. Appl. Phys., 92, 1238 (2002).

[22] T. Itoh and T. Abe, Appl. Phys. Lett., 53, 39 (1988).

[23] A.G. Milnes: Deep Impurities in Semiconductors (Wiley, N.Y. 1973).

[24] Y. Yatsurugi, N. Akijama, Y. Endo and T. Nozaki, J. Electrochem. Soc., 120, 975 (1973).

[25] L.S. Adam, M.E. Law and K.S. Jones, J. Appl. Phys., 87, 2282 (2000).