Investigations of the Effect of High Pressure on the Annealing Behavior of Oxygen Related Defects in Silicon

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Periodical:

Solid State Phenomena (Volumes 95-96)

Edited by:

H. Richter and M. Kittler

Pages:

59-64

DOI:

10.4028/www.scientific.net/SSP.95-96.59

Citation:

C. A. Londos et al., "Investigations of the Effect of High Pressure on the Annealing Behavior of Oxygen Related Defects in Silicon ", Solid State Phenomena, Vols. 95-96, pp. 59-64, 2004

Online since:

September 2003

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$35.00

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