Investigations of the Effect of High Pressure on the Annealing Behavior of Oxygen Related Defects in Silicon

Charalamos A. Londos; M.S. Potsidi; Andrzej Misiuk; Jadwiga Bak-Misiuk; Artem Shalimov; Valentin V. Emtsev

doi:10.4028/www.scientific.net/SSP.95-96.59

Paper Titles

Laser Crystallization of Thin a-Si Films on Plastic Substrates Using Excimer Laser Treatments
p.29

Predicting Material Parameters for Intrinsic Point Defect Diffusion in Silicon Crystal Growth
p.35

Dislocation Locking in Silicon by Oxygen and Oxygen Transport at Low Temperatures
p.43

Effect of Electron Irradiation on Thermal Donors in Oxygen-Doped High-Resistivity FZ Si
p.53

Investigations of the Effect of High Pressure on the Annealing Behavior of Oxygen Related Defects in Silicon
p.59

Simulation of Oxygen Contaminated Silicon Grain Boundaries in Cluster Approximation
p.65

Optimized Parameters for Modeling Oxygen Nucleation in Silicon
p.71

Oxygen Ion Bombardment for Local Oxide Formation in Si
p.77

Nitrogen Diffusion and Interaction with Oxygen in Si
p.83

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Investigations of the Effect of High Pressure on the Annealing Behavior of Oxygen Related Defects in Silicon

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Solid State Phenomena (Volumes 95-96)

Pages:

59-64

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.59

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Online since:

September 2003

Authors:

Charalamos A. Londos, M.S. Potsidi, Andrzej Misiuk, Jadwiga Bak-Misiuk, Artem Shalimov, Valentin V. Emtsev

Keywords:

Hydrostatic Pressure, Neutron Irradiation Defects, Silicon

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