Paper Titles

Dislocation Locking in Silicon by Oxygen and Oxygen Transport at Low Temperatures
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Effect of Electron Irradiation on Thermal Donors in Oxygen-Doped High-Resistivity FZ Si
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Investigations of the Effect of High Pressure on the Annealing Behavior of Oxygen Related Defects in Silicon
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Simulation of Oxygen Contaminated Silicon Grain Boundaries in Cluster Approximation
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Optimized Parameters for Modeling Oxygen Nucleation in Silicon
p.71

Oxygen Ion Bombardment for Local Oxide Formation in Si
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Nitrogen Diffusion and Interaction with Oxygen in Si
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Structure and Electronic Properties of Nitrogen Defects in Silicon
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Characterization of Nucleation Sites in Nitrogen Doped Czochralski Silicon by Density Functional Theory and Molecular Mechanics
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Optimized Parameters for Modeling Oxygen Nucleation in Silicon

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Gettering and Defect Engineering in Semiconductor Technology X

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

71-76

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.71

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Online since:

September 2003

Authors:

Markus Zschorsch, Robert Hölzl, Herbert Rüfer, Hans Joachim Möller, Wilfried von Ammon

Keywords:

Computer Modeling, Gettering, Nucleation, Oxygen Precipitation, Silicon, Taguchi

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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