Paper Titles
Effect of Electron Irradiation on Thermal Donors in Oxygen-Doped High-Resistivity FZ Si
p.53
Investigations of the Effect of High Pressure on the Annealing Behavior of Oxygen Related Defects in Silicon
p.59
Simulation of Oxygen Contaminated Silicon Grain Boundaries in Cluster Approximation
p.65
Optimized Parameters for Modeling Oxygen Nucleation in Silicon
p.71
Oxygen Ion Bombardment for Local Oxide Formation in Si
p.77
Nitrogen Diffusion and Interaction with Oxygen in Si
p.83
Structure and Electronic Properties of Nitrogen Defects in Silicon
p.93
Characterization of Nucleation Sites in Nitrogen Doped Czochralski Silicon by Density Functional Theory and Molecular Mechanics
p.99
Processing and Characterization of 300 mm Argon-Annealed Wafers
p.105

Oxygen Ion Bombardment for Local Oxide Formation in Si

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

77-82

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.77

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Online since:

September 2003

Authors:

D. Krüger, R. Kurps, Peter Formanek, G. Weidner

Keywords:

Defect, Implantation, Oxide Formation, Oxygen, SIMS, TEM

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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