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HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Simulation of Oxygen Contaminated Silicon Grain...

Simulation of Oxygen Contaminated Silicon Grain Boundaries in Cluster Approximation

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Gettering and Defect Engineering in Semiconductor Technology X

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

65-70

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.65

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Online since:

September 2003

Authors:

Alex L. Pushkarchuk, A.K. Fedotov, S.A. Kuten

Keywords:

Gettering, Grain Boundary, Oxygen, Silicon

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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