Predicting Material Parameters for Intrinsic Point Defect Diffusion in Silicon Crystal Growth

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Periodical:

Solid State Phenomena (Volumes 95-96)

Edited by:

H. Richter and M. Kittler

Pages:

35-42

DOI:

10.4028/www.scientific.net/SSP.95-96.35

Citation:

M. Griebel et al., "Predicting Material Parameters for Intrinsic Point Defect Diffusion in Silicon Crystal Growth ", Solid State Phenomena, Vols. 95-96, pp. 35-42, 2004

Online since:

September 2003

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$35.00

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