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HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Predicting Material Parameters for Intrinsic Point...

Predicting Material Parameters for Intrinsic Point Defect Diffusion in Silicon Crystal Growth

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

35-42

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.35

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Online since:

September 2003

Authors:

Michael Griebel, Lukas Jager, Axel Voigt

Keywords:

Intrinsic Point Defects (IPD), Material Parameter, Molecular Dynamic (MD), Semiconducting Silicon, Stillinger-Weber Potential, Tersoff Potential

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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