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HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Recrystallization of Silicon on Insulator Layers...

Recrystallization of Silicon on Insulator Layers Implanted with High Doses of Hydrogen Ions

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

23-28

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.23

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Online since:

September 2003

Authors:

Ida E. Tyschenko, A.B. Talochkin, Anton K. Gutakovskii, V.P. Popov

Keywords:

Crystallization, Hydrogen, Ion Implantation, Nanocrystal, Silicon-on-Insulator (SOI)

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Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

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Citation:

[1] V. P. Popov, I. V. Antonova, V. F. Stas', L. V. Mironova: R.F. Patent No. 99120527/28(021735) (1999).

[2] W. Han, J. Yu: J. Appl. Phys. Vol. 89 (2001), p.6551.

[3] V. P. Popov, A. K. Gutakovskii, L. N. Safronov, I. E. Tyschenko, K. S. Zhuravlev, A. B. Talochkin, I. V. Antonova, O. V. Naumova, V. I. Obodnikov, A. Misiuk, J. Bak-Misiuk, J. Domagala, A. Romano-Rodrigues, A. Bachrouri: Progress in SOI Structures and Devices Operating at Extreme Conditions (Kulwer Academic Publishers, Netherlands, 2002), p.269.

DOI: 10.1007/978-94-010-0339-1_21