Paper Titles

Smart-Cut Process for Ultrathin SOI Wafers Manufacturing
p.1

Investigation of Crystal Defects in Epitaxial Layers on Nitrogen-Doped Substrates and a Method for their Suppression
p.11

Defect Formation in Heavily As-Doped Cz Si
p.17

Recrystallization of Silicon on Insulator Layers Implanted with High Doses of Hydrogen Ions
p.23

Laser Crystallization of Thin a-Si Films on Plastic Substrates Using Excimer Laser Treatments
p.29

Predicting Material Parameters for Intrinsic Point Defect Diffusion in Silicon Crystal Growth
p.35

Dislocation Locking in Silicon by Oxygen and Oxygen Transport at Low Temperatures
p.43

Effect of Electron Irradiation on Thermal Donors in Oxygen-Doped High-Resistivity FZ Si
p.53

Investigations of the Effect of High Pressure on the Annealing Behavior of Oxygen Related Defects in Silicon
p.59

HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Laser Crystallization of Thin a-Si Films on...

Laser Crystallization of Thin a-Si Films on Plastic Substrates Using Excimer Laser Treatments

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology X

Info:

Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

29-34

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.29

Citation:

Cite this paper

Online since:

September 2003

Authors:

M.D. Efremov, Vladimir A. Volodin, Liudmila I. Fedina, Anton K. Gutakovskii, D.V. Marin, S.A. Kochubei, A.A. Popov, Yu. A. Minakov, V.N. Ulasyuk

Keywords:

Flexible Substrate, Nanocrystal, Pulsed Laser Annealing, Raman Spectroscopy, Silicon

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: