Smart-Cut Process for Ultrathin SOI Wafers Manufacturing

Christophe Maleville

doi:10.4028/www.scientific.net/SSP.95-96.1

Paper Titles

Smart-Cut Process for Ultrathin SOI Wafers Manufacturing
p.1

Investigation of Crystal Defects in Epitaxial Layers on Nitrogen-Doped Substrates and a Method for their Suppression
p.11

Defect Formation in Heavily As-Doped Cz Si
p.17

Recrystallization of Silicon on Insulator Layers Implanted with High Doses of Hydrogen Ions
p.23

Laser Crystallization of Thin a-Si Films on Plastic Substrates Using Excimer Laser Treatments
p.29

Predicting Material Parameters for Intrinsic Point Defect Diffusion in Silicon Crystal Growth
p.35

Dislocation Locking in Silicon by Oxygen and Oxygen Transport at Low Temperatures
p.43

Effect of Electron Irradiation on Thermal Donors in Oxygen-Doped High-Resistivity FZ Si
p.53

HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Smart-Cut Process for Ultrathin SOI Wafers...

Smart-Cut Process for Ultrathin SOI Wafers Manufacturing

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

1-10

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.1

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Online since:

September 2003

Authors:

Christophe Maleville

Keywords:

300mm, Haze, High Volume Manufacturing, Nano-Uniformity, Smart-Cut^®, Surface Nanotopography, Thickness Uniformity, Ultrathin SOI, Unibond, Wafer Bonding

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References

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