For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
Preface
Smart-Cut Process for Ultrathin SOI Wafers Manufacturing
p.1
Investigation of Crystal Defects in Epitaxial Layers on Nitrogen-Doped Substrates and a Method for their Suppression
p.11
Defect Formation in Heavily As-Doped Cz Si
p.17
Recrystallization of Silicon on Insulator Layers Implanted with High Doses of Hydrogen Ions
p.23
Laser Crystallization of Thin a-Si Films on Plastic Substrates Using Excimer Laser Treatments
p.29
Predicting Material Parameters for Intrinsic Point Defect Diffusion in Silicon Crystal Growth
p.35
Dislocation Locking in Silicon by Oxygen and Oxygen Transport at Low Temperatures
p.43
Effect of Electron Irradiation on Thermal Donors in Oxygen-Doped High-Resistivity FZ Si
p.53

Investigation of Crystal Defects in Epitaxial Layers on Nitrogen-Doped Substrates and a Method for their Suppression

Article Preview

Abstract:

You might also be interested in these eBooks
Gettering and Defect Engineering in Semiconductor Technology X View Preview

Info:

Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

11-16

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.11

Citation:

Cite this paper

Online since:

September 2003

Authors:

Katsuhiko Nakai, Koichi Kitahara, Yasumitsu Ohta, Atsushi Ikari, Masahiro Tanaka

Keywords:

Carbon, Crystal Defect, Czochralski, Epitaxial Layer, Nitrogen, Silicon, TEM

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

This article has no references.

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.