Defect Formation in Heavily As-Doped Cz Si
p.17
p.17
Recrystallization of Silicon on Insulator Layers Implanted with High Doses of Hydrogen Ions
p.23
p.23
Laser Crystallization of Thin a-Si Films on Plastic Substrates Using Excimer Laser Treatments
p.29
p.29
Predicting Material Parameters for Intrinsic Point Defect Diffusion in Silicon Crystal Growth
p.35
p.35
Dislocation Locking in Silicon by Oxygen and Oxygen Transport at Low Temperatures
p.43
p.43
Effect of Electron Irradiation on Thermal Donors in Oxygen-Doped High-Resistivity FZ Si
p.53
p.53
Investigations of the Effect of High Pressure on the Annealing Behavior of Oxygen Related Defects in Silicon
p.59
p.59
Simulation of Oxygen Contaminated Silicon Grain Boundaries in Cluster Approximation
p.65
p.65
Optimized Parameters for Modeling Oxygen Nucleation in Silicon
p.71
p.71
Dislocation Locking in Silicon by Oxygen and Oxygen Transport at Low Temperatures
Abstract:
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Periodical:
Solid State Phenomena (Volumes 95-96)
Pages:
43-52
Citation:
Online since:
September 2003
Keywords:
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Сopyright:
© 2004 Trans Tech Publications Ltd. All Rights Reserved
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