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Materials Science Forum Vols. *** (2004) pp.821-824 online at http://scientific.net  2004 Trans Tech Publications, Switzerland Research on the Sintering Process and Performance of Large-scale Alumina Matrix Ceramic Products X.H.
Zhang 1,c 1 School of Mechanical Engineering, Shandong University, 250061,Jinan, P.R.China a jerry@mail.sdu.edu.cn, bhester5371@hotmail.com, cjhzhang@sdu.edu.cn Keywords: Alumina, Sintering, Temperature gradient Abstract.
Then the base body of alumina matrix ceramic hollow beam (1200mm×80mm×80mm) was grouted and shaped by utilizing a vacuum-grouting Advances in Materials Manufacturing Science and Technology 822 machine.
Fig.1 The XRD analysis result of the hollow beam Materials Science Forum Vols. *** 823 During the sintering process, the evenly distributed temperature of the furnace chamber could be regarded as that of ceramic products.
Fig.2 SEM of the cross-section of the sample (×1000) Fig3 SEM of the cross-section of the sample (×600) Advances in Materials Manufacturing Science and Technology 824 Acknowledgements The work is supported by the Ministry of Education, P.

Improvement of Strength of Lotus-type Porous Aluminum through ECAE Process Tae Bum Kim1a, Masakazu Tane1b, Shinsuke Suzuki1c, Takuya Ide1d, Hiroshi Utsunomiya2e and Hideo Nakajima1f 1The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan 2Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan akim23@sanken.osaka-u.ac.jp,bmtane@sanken.osaka-u.ac.jp, csuzuki@sanken.osaka-u.ac.jp,dide23@sanken.osaka-u.ac.jp, euts@mat.eng.osaka-u.ac.jp,fnakajima@sanken.osaka-u.ac.jp Keywords: porous metals, equal channel angular extrusion, Vickers hardness, aluminum Abstract.
Acknowledgements This work was supported by the Global COE program (Centre of Excellent for Advanced Structural and Functional Materials Design) from the Ministry of Education, Culture, Sports, Science and Technology.
Forum Vol. 620 (2009), p. 757 [7] Y.
Forum Vol. 658 (2010), p. 211

In the paper, an advanced High Speed Centrifugal Sheering (HSCS) pulverizer was used to pulverize Chuanxiong to ultrafine particles.
Minerals Engineering. vol.21( 2008),p.1 [6] X.Shuxiong, and L.Huaqing:Progress in production and application of modern preparation technology of traditional Chinese medicine.
Guosheng: The impact of ultrafine pulverization on Chinese traditional medicine”, 2008 china international powder technology & application forum, vol.4(2008), p.11 [8] Y.Lianwei, and F.
Jianxia:Ultrafine pulverization technology and application, 2008 china international powder technology & application forum. vol.4(2008), p.16 [9] Y.

Therefore, developing new eco-friendly methods that enable joined materials to be easily recycled would be of great interest in engineering fields.
Using friction-stir-based techniques for joining dissimilar alloys is expected to have a positive impact on mechanical-engineering applications.
Forum. 838-839 (2016) 574-580
Forum. 382 (2018) 114-119
Forum. 889 (2016) 113-118

References [1] NFC-Forum, Available: http://www.nfc-forum.org
[4]Dominikus S, Aigner M. mCoupons: An application for near field communication (NFC)[C]//Advanced Information Networking and Applications Workshops, 2007, AINAW'07. 21st International Conference on.
Building a contactless university examination system using nfc[C]//Intelligent Engineering Systems (INES), 2011 15th IEEE International Conference on.

Processing and Characterization of Magnesium Alloys Hwa Chul Jung a and Kwang Seon Shin b School of Materials Science and Engineering Research Institute of Advanced Materials Seoul National University, Seoul 151-742, Korea a junghc1@snu.ac.kr, bksshin@snu.ac.kr Keywords: Magnesium Alloys, Manufacturing Process, Characterization, Alloy Design Abstract.
Forum Vol. 419-422 (2003), p. 851 [16] S.C.
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Forum(2003) p419 [2] A.
Arslan Kaya: Advanced Engineering Materials, 5, No. 12 (2003) p. 866 [8] H.
Maruyama, : Materials Science Forum, Vol. 544-545 (2007) P. 295 20� Crack (a) (b)

The Reform for Software Engineering Majors Based On CDIO CHEN Xiang1, a, QIU Ye1,b 1Hangzhou Institute of Service Engineering, Hangzhou Normal University, Hangzhou, Zhejiang Province, China aflyingchen77@163.com, bqiuye0120@163.com Keywords: experiment teaching reform; CDIO; Software Engineering.
(2) Engineering quality.
Vocational Education Forum, 5,pp.14-15. (2009)
CDIO outline innovative training and engineering [J].
Higher Engineering Education and Research, 3,pp.1-9(2008)

Materials Science Forum Vols. *** (2004) pp.358-361 online at http://scientific.net  2004 Trans Tech Publications, Switzerland A Method to Forecast the Cohesive Zone of Blast Furnace S.Z.
Ma 2,c 1 School of Mechanical Engineering, Shandong University, Jinan 250061, China 2 Bureau of Law of Shandong Province, Jinan 250101, China a lsz@sdu.edu.cn, bchengjian1975@163.net, cmwq007008@sina.com Keywords: Blast furnace, Cohesive zone, Visualization Abstract.
Materials Science Forum Vols. *** 359 r(k-1) ---the inner radius of a homocentric circle Fig. 2 the calculated r(k) ---the outer radius of a homocentric circle shape of the cohesive zone R(k) --the radius of this homocentric circle's center of gravity Fig.1 The divided blast furnace The Mass Conservation Equations in Each Homocentric Circle.
From this heat Advances in Materials Manufacturing Science and Technology 360 conservation equation, we find out the differential equation relationship[3] between the height and the temperature in the inner blast furnace as follows: SRH TTSH dZ Twd sg gs gg ××∆×−+−××= )1()( )( β ( 5 ) SRH TTSH dZ Twd s g gs ss ××∆×+−××= β) ( )( (6) In these two equations, Z means the height variable; Tg ,Ts mean the temperatures of blast furnace gas and blast furnace ore respectively.
As a whole, this method can estimate the shape and height of the Materials Science Forum Vols. *** 361 blast furnace's cohesive zone.

In fact, a clear picture of the defect behavior in SiC during a postimplantation thermal process is necessary for a defect engineering that preserves the as implanted doping profiles, maximizes the electrical activation of the implanted species and eliminates the step bunching phenomenon at the wafer surface.
Svensson: Advances in Silicon Carbide Processing and Applications, S.
Forum 527-529 (2006), p. 803 [9] H.
Forum 389-393 (2002), p. 807 [10] M.
Forum 527-529 (2006), p. 795 [20] V.