Search results

For example, (Al)GaN/SiC heterojunction bipolar transistors (HBTs) are promising candidates for high-power and high-frequency amplifiers [1].
Multilayer Ti/Al contacts were formed on the GaN surface using the standard lift-off technique and with no thermal annealing.
Under forward bias, dark red EL was observed from n +-GaN/p+-4H-SiC and 6H-SiC with Na ~ 1x10 18 cm-3.
In addition, the diode on 6H-SiC showed brighter EL than that on 4H-SiC under the same current density.
From C-V measurement, 6H-SiC is better for electron injection and this speculation is supported by EL measurement.

In this paper, devices A ITO/ PEDOT: PSS/PBD: PVK: (fl-5CF3-py)2Ir(acac) (8 %) /LiF/Al and B ITO/PEDOT: PSS/PBD: PVK: (fl-5CF3-py)2Ir(acac) (8 %) /TPBi/LiF/Al were fabricated.
TPBi as an electron-transporting layer, LiF/Al as a complex cathode.
Devices A ITO/PEDOT: PSS/PBD: PVK: (fl-5CF3-py)2Ir(acac) (8 %)/LiF/Al and B ITO/PEDOT: PSS/PBD: PVK: (fl-5CF3-py)2Ir(acac) (8 %) /TPBi/LiF/Al were fabricated.
The cyclic voltammetry curves EL properties.
EL spectra were seen in Fig. 4 (c).

The EL mechanism has been tentatively explained in terms of the energy-band diagram.
However, the EL of ZnO/n +-Si heterojunction has not yet been reported to date.
The PL and EL spectra of the ZnO film were recorded at RT using an Acton SpectraPro 2500i spectrometer.
Starting from the energy band diagram, the EL mechanism has been tentatively explained.
Teke, et al., J.

For this, several researches have investigated the effects of the trace elements, especially gallium’s influence, on the performance of various aluminum alloy anode material such as Al-Zn series, Al-Ga series, Al-Zn-In series and Al-Zn-Sn series [2-5].
Stankus and A.L.
El Shayeb, F.M.
Abd El Wahab and S.
Zein El Abedin: Corros.

El-Shazly1,3,b, M.F.
El-Kady1,4,c, Hesham I.
El-Shazly, M.
El-Kady, H.
El-Shazly, M.

El Hami1 and B.
[4] Moro T, El Hami A, El Moudni A.
[8] Aydemir, A et al.
[9] Jansson, M, et al.
Radi B. and El Hami A.

Kadim1,a* 1Biomedical Engineering Department, College of Engineering, University of Warith Al- Anbiyaa, Iraq aakeel_a86@yahoo.com *Corresponding author Keywords: ZnSe, TPD, PPV, PEDOT, QDs-LEDs, Organic Polymer Abstract.
The electroluminescence's (EL) hybrid devices were demonstrated by room temperature PL and electroluminescence (EL).
The EL spectrum reveals a broad emission band covering the range from 350 - 700 nm.
Fig. 5: I-V forward characteristics of hybrid EL devices.
Fig. 6: Electroluminescence of hybrid EL devices.

Kobayashi et al. [4], observed the dynamic behaviors of container cranes under seismic effects.
In literature, the first study on active vibration control of cranes made by Sagirli et al. [9].
The ground motions data of El Centro earthquake is shown in Fig. 2.
Fig. 2 Time history of El Centro earthquake acceleration on the shake table.
Fig. 6 Time responses of the container crane against El Centro earthquake.

The red and two blue EL bands can be related to radiative carrier recombination in 3C-SiC (red EL) and 6H-SiC (blue EL) [14] via the level associated with the presence of Al in the epilayer.
[4] A.A.Lebedev, G.N.Mosina, I.P.Nikitina, et.al.Techn.
[7] N.S.Savkina, A.A.Lebedev, A.M.Strel'chuk, et al Mat.Sci.
[12] A.Strelchuk, N.Savkina, A.Lebedev, et.al., Mat.Scie.
A.A.Lebedev, N.S.Savkina, A.M.Strel'chuk, et.al., Mat.Sci.

In 1987,Tang et al. reported a stacked EL cell structure, which has a luminescent efficiency of 1.5 lm/W and a luminance of 1000 cd/m2 for green light under lower operating voltage than 10V [1].
In this paper, we present a series of Electroluminescence (EL) devices with organe emission that can be varied with different excton-blcking layer.
EL properties of the devices with different thickness excton-blocking layer, especially the EL spectra of the devices have been studied.
As shown in Fig.2 (a), the devices have the same emission EL spectra with the different thickness of the excton-blocking layer, The normalized EL spectra of the devices shows two main emission peaks at 446 nm and 572 nm originating from DPVBi and DCJTB, respectively.
The key EL characteristics of devices are shown in Table 1.