Search results

Parallel turning is one among the advanced unconventional turning process.
[10] X P Zhang, C R Liu, Z Q Yao, Investigational Advances in Residual stress by Hard Turning, Material Science Forum, 2004, 471-472, 523-527
[17] J Huang, G Wang, The cutting residual stress included in the surface integrity, Advanced Materials Research, 2014, 893, 638-643
The International Journal of Advanced Manufacturing Technology, 2016, 89, 1989-1999
Proceedings of the Institution of Mechanical Engineers, Part C: Journal of Mechanical Engineering Science, 2011, 225, 1407-1417.

Lesz 1,b 1 Institute of Engineering Materials and Biomaterials, Silesian University of Technology, ul.
Introduction Advanced high strength steels (AHSS) containing metastable retained austenite require new ideas of chemical composition design and structure forming concepts.
Borek: Archives of Materials Science and Engineering Vol. 37 (2009), pp. 69-76
Grajcar: Journal of Achievements in Materials and Manufacturing Engineering Vol. 30 (2008), pp. 27-34
Grzegorczyk: Journal of Achievements in Materials and Manufacturing Engineering (2011), in press

As a proven engineering tool, the DICTRA software/databases package have been used for many comprehensive simulations which have significantly contributed to design and development of many advanced materials, to optimal settings/adjustments of material processing parameters, and to enhancements of materials properties and micro-structures
Many successful examples of applying such comprehensive research and engineering tools have proved that, in the whole life cycles (through design, development, production, processing, performance, waste and recycling, and so forth) of various advanced materials, significant enhancements can be achieved, by improving materials qualities and performances, by reducing experimental durations and expenses, and by increasing manufacturing efficiencies and environmental friendliness.
These packages will be further developed to meet various challenges in the advanced material science and technology community.
Ågren: Materials Science Forum, Vol. 475-479 (2005), p. 3339-3346
Beckermann (Eds.), Modeling of Casting, Welding and Advanced Solidification Processes III (TMS, 1998), p. 227-234

980 V, 33A Normally-Off 4H-SiC Buried Gate Static Induction Transistors Akio Takatsuka1, a, Yasunori Tanaka1, b, Koji Yano2, c, Tsutomu Yatsuo1, d, and Kazuo Arai3, e 1 Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan 2 Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Takeda-4, Kofu 400-8511, Japan 3 Research and Innovation Promotion Office, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan aa-takatsuka@aist.go.jp, byasunori-tanaka@aist.go.jp, cyano@esd.yamanashi.ac.jp, dt-yatsuo@aist.go.jp, ek-arai@aist.go.jp Keywords: SiC, buried gate static induction transistor, normally-off, threshold voltage Abstract.
These devices advance to practical use for example, DC-DC converter, DC circuit breaker and so on.
Forum 600-603 (2009) 1071

Low Defect Thick Homoepitaxial Layers Grown on 4H-SiC Wafers for 6500 V JBS Devices Yingxi Niu1,a, Xiaoyan Tang1,b*, Lixin Tian2, Liu Zheng2, Wenting Zhang2, Jichao Hu3, Lingyi Kong4, Xinhe Zhang4, Renxu Jia1, Fei Yang2, and Yuming Zhang1 1School of Microelectronics, Xidian University, Xi’an 710071, China 2State Key Laboratory of Advanced Power Transmission Technology, Global Energy Interconnection Research Institute, Beijing 102211, China 3Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048, China 4Dongguan Tianyu Semiconductor Technology Co., Ltd., Dongguan 523808, China ayingxiniu@163.com, bxytang@mail.xidian.edu.cn Keywords: 4H-SiC, Defect, Epitaxy, hot-wall CVD, JBS Abstract. 70-um thick homoepitaxial layers with very low defect density were grown on 6-inch 4° off-axis wafers using hot-wall chemical vapor deposition (CVD).
Materials Science Forum, 679-680(2011)123-126
Forum 740-742 (2013) 221-224
Materials Science Forum, 778-780(2014)398-401
Forum 778–780(2014)370-373

Frey1),3) 1) University of Erlangen-Nuremberg, Chair of Electron Devices, Cauerstrasse 6, 91058 Erlangen, Germany 2) University of Salerno, Department of Industrial Engineering, Via Giovanni Paolo II, 132, 84084, Fisciano (SA), Italy. 3) Fraunhofer IISB, Schottkystrasse 10, 91058 Erlangen, Germany E-mail: andreas.huerner@leb.eei.uni-erlangen.de Keywords: Junction Termination Extension, Simulation, Double-Ring Abstract.
Because the internal ring is fabricated simultaneously with the contact implantation and the external ring simultaneously with the single-jte implantation, in comparison to advanced multi-zone JTE-designs no additional implantation steps are mandatory [5].
Because of the large distance of the critical electric field from the mesa-transition, the dependence of the maximum achievable breakdown voltage on the angle of the mesa-transition, and thereby the requirement on advanced etching techniques is reduced drastically.
[4] Nguyen, D.M.; Huang, R.; Phung, L.V.; Planson, D.; Berthou, M.; Godignon, P.; Vergne, B.; and Brosselard, P., “Edge termination design improvements for 10kV 4H-SiC bipolar diodes” Material Science Forum, Vols. 740-742, pp. 609, 612, 2013
[7] Peters D., et al., 2010, Materials Science Forum, Vols. 645-648, pp. 901, 904, 2010

Nozaki1 1 Department of Electronic Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan 2 Radiation Effects Group, Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma, 370-1292, Japan 3 Energy Semiconductor Electronics Research Laboratory, National Institute of Advanced Industrial Science and Technology, 1-1-1, Umezono, Tsukuba, Ibaraki, 305-8568, Japan a iwamoto.naoya@jaea.go.jp Keywords: pn diode, charge collection efficiency, particle detector, electron irradiation Abstract.
The epitaxial layers were grown on 6H-SiC n-type substrates (CREE, 3.5o off, Si-face) by hot-wall chemical vapor deposition (CVD) at National Institute of Advanced Industrial Science and Technology (AIST).
Forum, Vol. 615-617 (2009), p.861 [3] F.
Forum, Vol. 600-603 (2009) p.1043 [5] F.

This review should be of interest to scientists and engineers concerned with the processing and use of ceramics for structural engineering applications.
The term "grain boundary engineering" [11] was coined and this aimed to understand the structure of the grain boundaries in silicon nitride based materials and the reactions occurring at them during sintering in order to achieve significant advances in materials properties.
Riedel: Advanced Mater., Vol. 12 (2000) p.883 [10] S.
Jack: in: Non-oxide Technical and Engineering Ceramics, edited by S.
Szweda: in: Non-oxide Technical and Engineering Ceramics, edited by S.

Preface The International Conference on Civil Engineering, Architecture and Building Materials provides a forum for accessing to the most up-to-date and authoritative knowledge from both industrial and academic worlds, sharing best practice in this exciting field of Civil Engineering, Architecture and Building Materials.
Following the success of the inaugural conference, the 2nd CEABM was held in Yantai, China, from 25 to 27 May 2012, organized by School of Civil Engineering of Yantai University, College of Civil and Architecture Engineering of Guizhou University and Hainan Society of Theoretical and Applied Mechanics.
This conference was organized in four simultaneous tracks: "Advances in Civil Engineering", "Advances in Structures", "Advanced Building Materials and Sustainable Architecture" and "Sustainable Environment and Transportation".
The Organizing Committee of CEABM 2012 Organized by: School of Civil Engineering, Yantai University College of Civil and Architecture Engineering, Guizhou University Hainan Society of Theoretical and Applied Mechanics Conference Organization Chairman Prof.
Shilang Xu, Zhejiang University, China Senior Engineer.

The experiment was carried out at Beamline 1-BM of the Advanced Photon Source (APS) in Argonne National Laboratory (ANL).
Forum 963 (2019) 284-287
Forum 740-742 (2013) 217-220
Forum, 679-680 (2011) 269-272
Forum 1062 (2022) 366-370