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Microstructural Analysis of a Thermomechanically Processed Si-Al TRIP Steel Characterized by EBSD and X-Ray Techniques GRAJCAR Adam1,a, RADWAŃSKI Krzysztof2,b and KRZTOŃ Hanna2,c 1 Institute of Engineering Materials and Biomaterials, Silesian University of Technology, 18a Konarskiego Street, 44-100 Gliwice, Poland 2 Institute for Ferrous Metallurgy, 12-14 K.
Introduction Advanced high-strength steels (AHSS) characterized by a multiphase microstructure belong to the most spectacular achievements in the field of novel materials for automotive industry.
Forum Vol. 550 (2007), p. 265 [2] A.
Forum Vol. 706-709 (2012), p. 2124 [3] A.

The material strengthening is considered in the present work in terms of solid solution strengthening (the Labusch-Naborro model), work hardening (the advanced one-parameter Kocks model), as well as precipitation strengthening due to the stress contribution of non-deformable particles, i.e. dispersoids (the Orowan by-pass).
European Congress on Computational Methods in Applied Sciences and Engineering (ECCOMAS 2012), Vienna, Austria (2012) [4] E.
Thijsse, Atomistic Simulation of Pipe Diffusion in AlCu alloys, Defect and Diffusion Forum 249 (2006) 47-54

Though very attractive, the interfacial indentation technique requires both high thickness oxide scale and undamaged scales upon return to room temperature which is not the most common case encountered for engineering alloys.
Clarke et al, Materials Science Forum, 461-464 (2004) 621-630 [3] A.
Galerie et al, Materials Science Forum, 461-464 (2004) 631-638 [4] P.
Lours et al, Materials Science Forum, 461-464 (2004) 639-646 [5] D.
Baleix et al, Materials Science & Engineering.

Saddow 3,e 1 NOVASiC, Savoie Technolac - Arche Bât.4, BP 267, F-73375 Le Bourget du lac Cedex, France 2 Naval Research Laboratory, Code 6813, Washington, DC 20375, USA 3 Electrical Engineering Dept., University of South Florida, Tampa, Florida 33620, USA a hmank@novasic.com, bcmoisson@novasic.com, cdturover@novasic.com, d twigg@estd.nrl.navy.mil, esaddow@nnrc.usf.edu Keywords : 3C-SiC, epilayer, (001)Si, Chemical-Mechanical Polishing (CMP), regrowth Abstract.
Forum Vol. 457-460 (2004), p.
Vicente : Silicon Carbide Recent Major Advances, Springer, (2004), p. 699-710
Forum Vol. 389-393 (2001), p. 729-732.

Ferro, Advanced Functional Material, 16 (2006) 975-979
Forum 778-780 (2014) 187-192 [7] K.
Madar, Material Science Forum, 457-460 (2004) 387
Monteil, Materials Science and Engineering: B, 130 (2006) 66-72

Regeneration of Bone Mass and Bone Quality around Implant with Grooves for Aligning Bone Cells in Rabbit Hindlimb Bones Takuya Ishimoto1,a, Kentaro Kawata1,b, Takashi Sakai2,c, Hideki Yoshikawa2,d, and Takayoshi Nakano1,e 1Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1, Yamada-oka, Suita, Osaka 565-0871, Japan 2Department of Orthopaedic Surgery, Osaka University Medical School, 2-2, Yamada-oka, Suita, Osaka 565-0871, Japan aishimoto@mat.eng.osaka-u.ac.jp, bkkawata@himeji.sanyo-steel.co.jp, ctsakai@ort.med.osaka-u.ac.jp, dyhideki@ort.med.osaka-u.ac.jp, enakano@mat.eng.osaka-u.ac.jp Keywords: Bone regeneration, biological apatite (BAp), apatite orientation, microbeam X-ray diffraction, transmission optical system, grooved implant, orientation and migration of cells Abstract.
Acknowledgements This work was supported by the Priority Assistance of the Formation of Worldwide Renowned Centers of Research—The Global COE Program (Project: Center of Excellence for Advanced Structural and Functional Materials Design); Grants-in-Aid for Young Scientists (S) and (B) from the Japan Society for the Promotion of Science (JSPS); and Funding Program for Next Generation World-Leading Researchers by the Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan.
Forum Vols. 638-642 (2010), p. 576
Forum Vols. 654-656 (2010), p. 2241

Preparation of Composite Conductive Microspheres Used in Anisotropic Conductive Adhesive Films Jian Maa, Hong Gaob and Xu Chenc School of Chemical Engineering and Technology, Tianjin University, 300072, China ajiyexuan3@sina.com, bhgao@tju.edu.cn, cxchen@tju.edu.cn Keywords: Anisotropic Conductive Adhesive Films(ACF); Polystyrene Sphere; Chemical Plating Abstract: Polymer-based conductive adhesive materials have become widely used in many electronic packaging interconnect applications.
Forum Vol. 127(2005), p. 29-32
[2] Watanabe I, Fujinawa T, Arifuku M, Fujii M and Gotoh Y In: Proceedings of the 9th IEEE international symposium on advanced packaging materials: processes, properties and interfaces, Atlanta, GA, 2004, p 11 [3] J.
Forum Vol. 10(1995), p. 247-252.

Labrincha1d 1Ceramics and Glass Engineering Department, CICECO, University of Aveiro, 3810 -193 Aveiro, Portugal 2UIDM, ESTG, Polytechnique Institute of Viana do Castelo, 4900 Viana do Castelo, Portugal afraupp@cv.ua.pt, bribeiro@estg.ipvc.pt, csegadaes@cv.ua.pt, djal@cv.ua.pt Keywords: extrusion; industrial wastes; ceramic properties.
Science Forum, Advanced Materials Forum III (2006), p. 1726

Citation & Copyright (to be inserted by the publisher ) Characterization of electrical properties in high-dose implanted and post-implantation-annealed 4H-SiC wafers using infrared reflectance spectroscopy K.Narita 1, Y.Hijikata 1, H.Yaguchi 1, S.Yoshida 1,2, J.Senzaki2, and S.Nakashima 2 1 Department of Electrical and Electronic Systems, Faculty of Engineering, Saitama University 255 Shimo-ohkubo, Sakura-ku, Saitama-shi, Saitama 338-8570, Japan 2 Power Electronics Research Center, Nat.
Inst. of Advanced Industrial Science and Technology AIST Tsukuba Central2, 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, Japan Keywords: 4H-SiC, Ion implantation, Activation anneal, Infrared reflectance spectroscopy, Hall measurements, Carrier concentration, Mobility, Crystalline damage Abstract.
Forum, Vol. 389-393, 859 (2002)
Forum, Vol. 389-393, 621 (2002) [7] H.

Balakrishna1 1 Cree, Inc. 4600 Silicon Drive, Durham, NC, 27703, USA 2 Carnegie Mellon University, Department of Materials Science and Engineering, 5000 Forbes Avenue, Pittsburgh, PA 15213, USA joe_sumakeris@cree.com Keywords: Shockley stacking faults, Bipolar power devices, Forward voltage drift, Basal plane dislocations, Threading edge dislocations, Dislocation conversion Abstract.
These advances allow us to yield Vf stable, multi-kV bipolar SiC power devices.
A very significant recent advance in bipolar SiC device technology is the discovery that the naturally preferred conversion of substrate basal plane dislocations (BPDs) into threading edge dislocations (TEDs) in epilayers can be improved to almost 100% efficiency by selectively etching the substrate prior to epilayer growth [4].
Forum Vol. 353-356 (2001), p.299. 2.
Forum Vol. 483-485 (2005), p. 965. 6.