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The elevation of horizontal layers above the water surface are EL.+5.850m, EL.+10.0m.
References [1] Xu Li，Liu Meiyan, Wang Yanfeng, et al.
[3] Ou Jinping et al.
[5] Eatherton M R, Hajjar J F,Deierlein G G, et al.
[8] Zhao Dong, Wang Weiqiang, Ma Nvjian, et al.

Abdel-Rahman, Alaa El-deen, A.
El-Nahhas, Yahia A.Lotfy and Emad A.
Badawia Faculty of Science, Physics Department, El-Minia University, P.O. 61519 El-Minia, Egypt a emadbadawi@yahoo.com Keywords: Age Hardening, Aluminum Alloys, HV Values, Positron Mean Lifetime Values Abstract Many aluminum-based alloys are strengthened by a heat treatment process known as age hardening.
The mechanical characterization of heat-treatable 6xxx (Al-Mg-Si-Cu based) 6063 wrought aluminum alloys was studied.
Abdel-Rahman, Alaa Al-deen and Emad A.

El-Sebaii et al [4] achieved the best performance of using gravel as porous matrix.
El-Sebaii et al. [4] recommended a mass flow rate of 0.05kgs-1 or lower, while Aldabbagh et al. [5] confirmed that the efficiency increases with increasing the mass flow rate for the range between 0.012-0.038kgs-1.
El-Sebaii, S.
El-Shebaii,H.
El-Sebaii, S.M.

The activation energies of the process responsible for spreading/penetration are EL = 0.3±0.05 eV and ES = 0.5±0.1 eV for liquid and solid Ga, respectively.
The model reproduces the spreading/penetration rates that are observed, and gives reasonable estimates of the experimental activation energies ES and EL.
The activation energies of the spreading/penetra- tion process are EL= 0.3±0.05 eV (liquid Ga, line 1) and ES = 0.5±0.1 eV (solid Ga, line 2.
Tu et al. noted that the scallop morphology enables a high rate of wetting reaction, while the layer-type IC acts as diffusion barrier to dissolution [11].
Nix et al.

Abou El-khair et al. (2011) metallurgical, mechanical and thermal properties of squeeze cast SiC, ZrO2 reinforced composites [9].
They are Pure Al, Al with 5% Ni, Al with 10% Ni, Al with 5% Ni (later subjected to squeeze casting), Al with 10% Ni (later subjected to squeeze casting) The temperature was kept at 973 K (when Ni is added) and 1123 was the maximum temperature.
Mechanical Properties and metallurgical properties are compared to Stir casting (Al 5% Ni, Al 10% Ni) and squeeze casting (Al 5% Ni, Al 10% Ni) and with the Pure Al.
Abou El-khair, A.
El-Sheikhb, “Microstructure, thermal behavior and mechanical properties of squeeze cast SiC, ZrO2 or C reinforced ZA27 composites”, Materials Science and Engineering A, 528 (2011) 2353–2362

This requirement is met at the phase boundary (Al)+Al9FeNi/ (Al) +Al9FeNi+Al3Fe.
Experimental alloys were prepared in an electric furnace in graphite–chamotte crucibles using 99.99 and 99.5% pure Al, 99.9% pure Zn, 99.9% pure Mg, 99.9 pure Cu and master alloys (Al–20%Ni, Al–10%Fe, Al–10%Mn).
Mechanical properties of experimental alloys HT1 Al6Zn4Ni Al7Zn1Ni Al6Zn0.5Ni Al5Cu YS, MPa UTS, MPa El, % YS, MPa UTS, MPa El, % YS, MPa UTS, MPa El, % YS, MPa UTS, MPa El, % T4 316 471 7.4 320 440 5.6 270 415 10.5 130 290 18.0 T6 518 572 7.1 536 570 1.2 485 512 3.6 293 422 11.5 1heat treatment Technological effectiveness of an alloy Al6Zn0.5Ni is the best among all considered alloys that allows to get shaped castings by various casting methods from it (Fig.6).
Bley, et. al., An Influence of alloy composition and heat treatment on precipitate composition in Al–Zn–Mg–Cu alloys, Acta Mater. 58 (2010) 248–260
[5] Yanxia Ii, Ping Li, Gang Zhao, et. al., The constituents in Al–10Zn–2.5Mg–2.5Cu aluminum alloy, Mat.

Nogriya et al have also observed the luminescence properties of CdSe/PVA composite film [4].
Mo et al have also found the zinc blend cubic structure of CdS in CdS/PVA composite film [12].
Smyntyna et al [29].
Fujita et al and Hyeok et al [32,33] have also reported the similar voltage-brightness characteristic for LDPE and MEH+PPV/ CdSe nanocomposite respectively.
Pier et al Electro-optic properties of CdS embedded in polymer: Physical Review B 48 (16) (1993) [3] S.

Ouigman et al. [17] also carried out an analysis of the heavy metals present in RDFs.
This technology is not yet exploited in our country as shown by Aboudaoud et al. [22].
El Morjani, M.
El Ouinani, A.
El Kourdi, Souad Abderafi, M.

It has been demonstrated that the technology of selective diffusion (using a graphite mask) of Al and B into SiC could be successfully used for fabrication of high voltage PIN diodes [3].
A photolithography process was employed to fabricate the mesa p-n diode structures with a diameter of 300 µm using Ti/Al/Ni for the p-contacts and Ni for the ncontacts.
This peak also appeared under forward bias for Al-doped epitaxial diode structures [5].
Ma for EL measurements.
EL spectra of the p+/n-/n+ and p+/p-/n+ diodes Fig.3.

LEDs with a mesa-like edge contour were fabricated by a conventional technology, using Al evaporation in vacuum on the front and rear surfaces of the samples.
The emission from the front diode surface free from Al was focused onto the entrance slit of the monochromator.
When measuring the quantum efficiency, we used the evaporation of Ni (instead of Al) on the rear surface.
Both EL lines are associated with the formation of structural defects.
The EL rise and decay times are less than 10 µs in the diode.