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Online since: May 2014
Authors: Ming Jen Tan, Yong Sheng Wang, Beng Wah Chua, Emin Bayraktar
The reason was attributed to their chemically homogeneous structure and the absence of grain boundaries, second phases and segregations.
According to Faraday’s law, the corrosion rate, Rcorr, only depends on the corrosion current density, and can be calculated as [18]: (1) Where Aw is the average atomic weight of metal, ρ is the density, z is the charge number which indicates the number of electrons exchanged in the corrosion reaction and F is the Faraday constant.
Online since: March 2020
Authors: Lenka Nevřivová
This is also visible in the high number of papers published on the topic in a substantial number of journals worldwide [1].
M., Synthesis and characterization of high purity, fine grained mullite.
Online since: November 2011
Authors: Yasuhiro Uetani, Kenji Matsuda, Susumu Ikeno, Masayoshi Dohi, Nanako Mori
Our previous works on thixo-extrusions of high strength and foundry aluminum alloys, which are difficult to hot-work, at higher solid fractions ( fsolid > 0.85 ) have shown that A7075, A2014, hypereutectic Al-Si-Cu-Mg and Al-10%Mg alloys must have a finely grained or non-dendritic fine structure, in order to obtain excellent thixo-extrudability, good mechanical property and age-hardenability of thixo-extruded products comparing to those of hot-extruded ones [1-4].
As for the cause of higher peak hardness values and also larger age-hadenabities in rheo-extruded bars, i) increase in a degree of supersaturation of solid solution due to rapid cooling from high temeperatures where the liquid phases exist, ii) refinement and increase in number of presipitates contributing to age-hardening, and iii) existence of much higher age-hardenable zones due to segregation of the solute relating to age-hardening may have to be taken into account
It was thought that this poor tensile property was attributable to existence of a large number of micro shrinkage porosities near the primary silicon particles.
Online since: July 2011
Authors: Yu Chun Ma, Ying Yong Li, Xiao Yan Chen
Dividing all applications into two control classes to manage shim functionality is not nearly fine-grained enough for serious use.
Socket descriptor mapping and socket substitution for lower layers shim control system is a rule object, consisting of an IP address, a subnet mask and two port numbers.
Since network protocols typically have a large number of tunable parameters, the sysctl interface facilitates adjusting system properties without requiring editing of source code and kernel recompilation.
Online since: June 2008
Authors: Shan Tung Tu
Even the microstructures of metals may contain grains of greater strength and lower strength.
The material parameters for Eq. 1 are given as follows where the stress in MPa and time in hour: E =1.65 x 10 5, µ =0.3, B = 4.263 x 10-16, n = 6.74, A = 8.0385 x 10-10, υ = φ = 4.23, Dcr=0.999 The structures of a number of length ratios have been calculated.
A number of cases are thus computed by assigning the different damage values of Bar 2 corresponding to different times prior to rupture repair.
Online since: January 2010
Authors: Katsuhiro Maekawa, Kazuhiko Yamasaki, Tomotake Niizeki, Mamoru Mita, Yorishige Matsuba, Nobuto Terada, Hiroshi Saito
The test number of each case is five.
Densification of the Ag paste depends on the evaporation of tetradecane, grain growth of Ag particles, and the decomposition of dispersant with increasing temperature and time.
The test number of each case is twenty.
Online since: February 2018
Authors: Tian Jin Zhang, Fan Fan Ning, Juan Jiang
It is seen that all diffraction peaks could be indexed as an orthorhombic perovskite structure according to the JCPDS file number 42-0423 for CaTiO3.
There was no obvious secondary phase for the samples which agreed with the XRD results and the average grain size of the samples were in the range of 2-4 μm.
The spectra have been analyzed by using the classical harmonic oscillator model based on the standard Lorentzian formula [Eq. (2)] and the Fresnel formula [Eq. (3)]: ε*ω=ε∞+j=1nωpj2ωoj2-ω2-iγjω (2) Rω=1-ε*ω1+ε*ω2 (3) where ε*(ω) is complex dielectric function; ε∞ is the dielectric constant caused by the electronic polarization at high frequencies; ωpj, ωoj and γj are the plasma frequency, the transverse frequency, and damping factor of the j-th Lorentz oscillator, respectively; n is the number of transverse phonon modes; R(ω) is the infrared reflectivity.
Online since: June 2016
Authors: R. Edy Purwanto, Agus Sujatmiko, Moh Hartono
Having obtained the desired temperature, holding time is applied for a certain time so that atoms can move to improve the process of growing new crystal grains.
Acknowledgement Directorate General of Higher Education Grant Research on Decentralization, Contract No. 4770/PL2.1/ HK/2015 March 24, 2015, DIPA Research Directorate Community Service Number DIPA 023.04.1.673453/2015, November 14, 2014, DIPA Revision 01, dated 29 February 2015.
Jordan Journal of Mechanical and Industrial Engineering, Volume 1, Number 1 (2007) Page 1-5
Online since: September 2008
Authors: Mohammed Fadhil Mabrook, Daniel Kolb, Christopher Pearson, D.A. Zeze, M.C. Petty
Although pentacene is normally used as a semiconductive layer in devices such as organic transistors [17], under certain processing conditions (flash evaporation) the resulting thin films possess small grain structures and are more electrically resistive [18].
The amount of charge stored in the nanoparticles Q can be estimated from Q = C∆VFB, where ∆VFB is the flat band voltage shift; this gives a figure for the number of charge carriers stored of 3.6x10 12 cm -2 for a sweep voltage of ±9 V.
-5 -4 -3 -2 -1 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 2 3 4 5 6 7 8 9 10 1.4 1.6 1.8 2.0 2.2 2.4 2.6 Memory Window (V) Voltage sweep (V) C/Cmax Voltage (V) 3 to -3 5 to -5 7 to -7 9 to -9 0 20 40 60 80 100 120 140 160 180 86 88 90 92 94 96 98 100 102 Charge storage (%) Time (min)ACKNOWLEDGEMENTS We would like to thank the Science and Engineering Research Council for funding this work (Grant Number EP/D039924/1).
Online since: September 2003
Authors: Peder Bergman, Fanny Dahlquist, H. Lendenmann, Christer Hallin
The virgin defects have distinctly different signatures: A) mircopipe, B) misfit C, D) edge, screw dislocations and grain boundaries, E) small SF loop, F) curved SF loops, G) in plane line.
Table 1 shows a number of experimental approaches, including very thick buffer layers, buffer layers with multiple alternating high-low doping density (super0 10 30 distance (mm) -4 0 12 warpage (um) initial epi metal final alloy 0 10 30 distance (mm) -4 0 12 warpage (um) initial epi metal final alloy Figure 9 Typical bending at steps during processing of a 35mm CREE single side polished 4H-SiC wafer.
The results in Fig. 10, seem to indicate that the peak number density areas with >50mm-2 nucleation threads are reduced for the super buffer and with a prolonged back etching step before epi growth.
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