Sort by:
Publication Type:
Open access:
Publication Date:
Periodicals:
Search results
Online since: February 2011
Authors: Jin Man, Li Li Yang, Guang Jie Shao, Man Jin, Chao Feng Xia
Jansen,et al: Acta Mater.
,Vol.51, (2003),p.789. [3]Z.M.El-Baradie, M.El-Sayed: Journal of Materials Processing Technology, Vol.62,(1996),p.76
[4]E.Di Russo, M.Conserva, F.Gatto, et al: Met.
A.Al-Aql: Mater and Design, Vol,24,(2003),p.547
Field, Hasso Weil, et al: Scripta Materialia, Vol.53,(2005),p.299
,Vol.51, (2003),p.789. [3]Z.M.El-Baradie, M.El-Sayed: Journal of Materials Processing Technology, Vol.62,(1996),p.76
[4]E.Di Russo, M.Conserva, F.Gatto, et al: Met.
A.Al-Aql: Mater and Design, Vol,24,(2003),p.547
Field, Hasso Weil, et al: Scripta Materialia, Vol.53,(2005),p.299
Online since: January 2010
Authors: Ohjoon Kwon, Kyoo Young Lee, Gyo Sung Kim, Kwang Geun Chin
Annealed martensite based
TRIP steels have been investigated by Sugimoto et al.[13,14].
The tensile properties of the developed steel are shown to have TS of 1100MPa and El of 29%.
The role of Al is to increase the stacking fault energy.
Zackay et al. : Trans.
Chin et al.: Materials Research Society of Korea, Vol. 15, (2005), p.115 [22] M.J.
The tensile properties of the developed steel are shown to have TS of 1100MPa and El of 29%.
The role of Al is to increase the stacking fault energy.
Zackay et al. : Trans.
Chin et al.: Materials Research Society of Korea, Vol. 15, (2005), p.115 [22] M.J.
Online since: February 2011
Authors: You Wang Hu, Xiao Yan Sun, Jian Duan
(a) I-V curves of EL devices with ultra thin TiO2 on different pretreatment of ITO.
(b) EL efficiency vs current density of EL devices with ultra thin TiO2 on different pretreatment of ITO.
(a) I-V curves of EL devices with different pretreatment of ITO.
(b) EL efficiency vs current density of EL devices with different pretreatment of ITO.
Figure 1 (a) Figure 1 (b) Figure 2 (a) Figure 2 (b) 2´2mm2 2´2mm2 2´2mm2 (a) (b) (c) Figure 3 Figure 4 Table I Device Configuration A ITO/CF4 plasma/NPB/AlQ/LiF/Al B ITO/H2 plasma/NPB/AlQ/LiF/Al C ITO/ NPB/AlQ/LiF/Al D ITO/CF4 plasma/TiO2/NPB/AlQ/LiF/Al E ITO/H2 plasma/ TiO2/NPB/AlQ/LiF/Al F ITO/ TiO2/NPB/AlQ/LiF/Al Table II Plasma treatment Rmax (nm) Rms (nm) Bearing (%) Surface energy (mN/m) CF4 2.84 0.279 7.431 55 H2 4.399 0.438 5.215 67.7 Non 5.038 0.755 10.149 67.2 References [1] Friend R H 1999 Nature 397 121
(b) EL efficiency vs current density of EL devices with ultra thin TiO2 on different pretreatment of ITO.
(a) I-V curves of EL devices with different pretreatment of ITO.
(b) EL efficiency vs current density of EL devices with different pretreatment of ITO.
Figure 1 (a) Figure 1 (b) Figure 2 (a) Figure 2 (b) 2´2mm2 2´2mm2 2´2mm2 (a) (b) (c) Figure 3 Figure 4 Table I Device Configuration A ITO/CF4 plasma/NPB/AlQ/LiF/Al B ITO/H2 plasma/NPB/AlQ/LiF/Al C ITO/ NPB/AlQ/LiF/Al D ITO/CF4 plasma/TiO2/NPB/AlQ/LiF/Al E ITO/H2 plasma/ TiO2/NPB/AlQ/LiF/Al F ITO/ TiO2/NPB/AlQ/LiF/Al Table II Plasma treatment Rmax (nm) Rms (nm) Bearing (%) Surface energy (mN/m) CF4 2.84 0.279 7.431 55 H2 4.399 0.438 5.215 67.7 Non 5.038 0.755 10.149 67.2 References [1] Friend R H 1999 Nature 397 121
Online since: April 2021
Authors: Shuo Wang
Current vs applied voltage and EL spectrum of C60-OLEDs with different thickness of HTL.
Current vs applied voltage and EL spectrum of OLEDs with different thickness of HTL.
EL spectrum of C60-OLEDs with different thickness of EML.
The current vs applied voltage, EL characteristics have been plotted.
Yin, Highly efficient tandem OLED based on C60/rubrene: MoO3 as charge generation layer and LiF/Al as electron injection layer, Appl.
Current vs applied voltage and EL spectrum of OLEDs with different thickness of HTL.
EL spectrum of C60-OLEDs with different thickness of EML.
The current vs applied voltage, EL characteristics have been plotted.
Yin, Highly efficient tandem OLED based on C60/rubrene: MoO3 as charge generation layer and LiF/Al as electron injection layer, Appl.
Online since: February 2011
Authors: Jian Feng Zhu, Wen Wen Yang, Fang Ni Du
Results and discussion
Fig.1 the DSC curves of Ti-Al, Al-Cr2O3 and
Ti-Al- Cr2O3 systems
DSC analysis curves obtained from room temperature to 1200 °C are presented in Fig. 1.
There are three curves in Fig.1: one is the Ti-Al system, the second is the Al-Cr2O3 system, and the third is Ti-Al-Cr2O3 system.
Huang and E.L.
Huang and E.L.
Gutmanas, and et al: J Eur Ceram Soc.
There are three curves in Fig.1: one is the Ti-Al system, the second is the Al-Cr2O3 system, and the third is Ti-Al-Cr2O3 system.
Huang and E.L.
Huang and E.L.
Gutmanas, and et al: J Eur Ceram Soc.
Online since: August 2011
Authors: Gabriel Ferro, Bilal Nsouli, Khaled Zahraman, Maher Soueidan, Ghassan Younes
Box 11-8281, Riad El Solh 1107 2260 Beirut, Lebanon
3Laboratoire des Multimatériaux et Interfaces, UMR-CNRS 5615, Université Claude Bernard Lyon1, 43 Bd du 11 nov. 1918, 69622 Villeurbanne, France
aghass@bau.edu.lb, bmsoueidan@cnrs.edu.lb, cgabriel.ferro@univ-lyon.fr, dzahraman@cnrs.edu.lb, ebnsouli@cnrs.edu.lb,
Keywords: PIXE, LE-PIXE, Ion beam, thin film, Al doping, SiC
Abstract.
The thickness of the Al-doped SiC layer was measured to be ~1µm.
The LOD of Al in this case is equal to 6x1018 at/cm3.
Beside Al and Si signal, other elements were also detected such as Na, S, Cl, K and Ca.
El-Ashry, M.
The thickness of the Al-doped SiC layer was measured to be ~1µm.
The LOD of Al in this case is equal to 6x1018 at/cm3.
Beside Al and Si signal, other elements were also detected such as Na, S, Cl, K and Ca.
El-Ashry, M.
Online since: May 2015
Authors: Bin Wei, Meng Jie Wei, Cui Yun Peng, Rong Juan Huang, Kun Ping Guo, Yue Lin Jing, Tao Xu
We used aluminum (Al) layer as the metal cathode and several pairs of SiO2/TiO2 QWL as the DBR.
The typical deposition rates of organic material, LiF and Al were 0.6, 0.1 and 5.0 Å/s, respectively.
The configuration of the MOLED is glass/dielectric mirror/ITO/HTL (x nm)/EML (y nm)/ETL (z nm)/LiF (0.3 nm)/Al (300 nm).
EL emission spectra measured at different angles for Device B.
Mason, Enhanced electron injection in organic electroluminescence devices using an Al/LiF electrode, Appl.
The typical deposition rates of organic material, LiF and Al were 0.6, 0.1 and 5.0 Å/s, respectively.
The configuration of the MOLED is glass/dielectric mirror/ITO/HTL (x nm)/EML (y nm)/ETL (z nm)/LiF (0.3 nm)/Al (300 nm).
EL emission spectra measured at different angles for Device B.
Mason, Enhanced electron injection in organic electroluminescence devices using an Al/LiF electrode, Appl.
Online since: January 2020
Authors: Abdellah El Barkany, Ahmed El Biyaali, Oumaima Bounou
[2] Bounou O., El Barkany A., El Biyaali A., Inventory Models for Spare Parts Management: A Review, International Journal of Engineering Research in Africa, Vol. 28, pp. 182-198, 2017
[8] Subash Babu A., Sanghi U., Ur Rehman A., AL-Shayea A.
[12] Rahimi-Ghahroodi S., Al Hanbali, A., Vliegen, I.M.H., Cohen, M., 2019.
[14] Bounou O., El Barkany A., El Biyaali A., The performance evaluation of the spare parts management: case study, Management and Production Engineering Review, Vol. 10, No 2, pp. 37-49, 2019.
[16] Fattah J., Ezzine L., El Moussami H., Lachhab A., 2016.
[8] Subash Babu A., Sanghi U., Ur Rehman A., AL-Shayea A.
[12] Rahimi-Ghahroodi S., Al Hanbali, A., Vliegen, I.M.H., Cohen, M., 2019.
[14] Bounou O., El Barkany A., El Biyaali A., The performance evaluation of the spare parts management: case study, Management and Production Engineering Review, Vol. 10, No 2, pp. 37-49, 2019.
[16] Fattah J., Ezzine L., El Moussami H., Lachhab A., 2016.