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Cathodoluminescence and electroluminescence of semiconductor structures in SEM Mariusz Pluska1, a, Andrzej Czerwinski1,b, Jacek Ratajczak1,c Anna Szerling1,d and Jerzy Kątcki3,e 1Institute of Electron Technology, Al.
Therefore, also EL measurements of the test structure were performed.
EL CL e-beam V1 = V2 Fig. 3.
CL and EL spectra registered at metallized part of mesa.
The exemplary CL and EL spectra for the mesa voltage of 926 mV are shown in Fig. 3.

A study of the photoluminescence (PL) of doped TPP in poly[2-methoxy-5- (2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) has been conducted by Morgado et al[11].
The device structure used in this investigation was ITO/PEDOT:PSS(20 nm)/1%TTP:MEH-PPV(80 nm)/Al(100 nm).
The corresponding EL spectra were recorded and shown in Figure 3.
However, the EL properties were quite different.
It hints that the process of PL and EL follow different procedure.

Based on Fig. 1, a diode structure of Au/PSiNs/p-Si/Al was used in order to measure electroluminescence (EL) spectra.
Lastly, PL and EL spectra were measured by using PL spectrometer.
Semi-transparent electrode (Au) Porous silicon nanostructures Metal electrode (Al) P-type silicon wafer Fig. 1, A diode structure of Au/PSiNs/p-Si/Al.
The EL spectra of PSiNs samples were presented in Fig. 5.
At the beginning of the EL measurement, the involvement to the EL is mainly from the larger nanocrystallites [7, 9, 10].

The EL irradiance originated from parallel lines oriented along the [11-20] crystallographic direction.
N-metal contacts were formed by sputter deposition of a Ni film (200 nm), while p-metal contacts were formed by e-beam deposition using the following sequence: Ti(200Å)/Al(400Å)/Ti(200Å)/ Ni(1500Å).
EL images of the same APD device at different currents: 2.5 mA (a) and 4.0 mA (b).
This spectrum was in a good agreement with a similar one measured by Ono et al. from 4H-SiC p-n diodes also in avalanche conditions [3].
Very similar luminescencing stripes at breakdown were observed by Banc et al in Ref. [4].

After deposition of 6 periodic Si QDs/SiO2 multilayers, the samples were annealed at 1000 o C and then Al and semi-transparency Au (40nm) were evaporated as back and front electrodes, respectively, to construct LED structures.
Electroluminescence was measured by applying dc bias on the Au gate electrodes while the Al back electrode was grounded.
Figure 1 is the EL spectrum under the gate bias of -15V for the present LED sample.
Figure 1 Room temperature EL and PL spectra for Si/SiO2 stacked structures with 6 periods.
It is found that the EL intensity is increased with increasing negative gate bias.

The current density –voltage and the luminance- voltage characteristics of devices a-d Fig. 3 shows the EL efficiency curves as a function of luminance for the devices.
The EL efficiency is rarely changed from voltage.
Normalized EL intensity of the different devices a-d at different voltage The EL spectra and the CIE coordinates of the white light-emitting device are influenced by the each emissive layer and applied voltage.
Fig.5 shows the EL spectra of devices a–d at different applied voltages.
The normalized EL spectra of the devices shows two main emission peaks at 456 nm, 628 nm originating from DPVBi, and Ir(piq)2(acac), respectively.

The highest strength was observed in the Al- Mg-Mn-Zr-Sc alloy (UTS = 425MPa), in combination with elongation to failure of EL=17 %.
Particles in the Al-Mg-Zr-Sc (a), (b) and Al-Mg-Zr alloys (c), (d).
b. 200 nm 200 nm The mechanical characteristics of the alloys (yield strength, YS, ultimate tensile strength, UTS, elongation to failure, EL %, and reduction in cross-sectional area, RA %) strongly depend on the number of ECAP passes.
The best result in terms of ductility was achieved with the Al-Mg-Zr-Sc alloy by applying 6 passes of ECAP. 100 150 200 250 300 350 0 2 4 6 8 Number of passes YS, MPa 270 290 310 330 350 370 390 410 430 450 0 2 4 6 8 Number of passes UTS, MPa 20 25 30 35 40 45 0 2 4 6 8 Number of passes RA,% 10 12 14 16 18 20 0 2 4 6 8 Number of passes EL,% Al-Mg-Mn-Zr Al-Mg-Mn-Zr-Sc Fig. 11.
These characteristics are higher for the scandium-containing alloy (UTS = 425 MPa, EL = 17%). 3.

With this consideration, new limit loads Fmax,el and deflections vmax,el were calculated for all beams
· This analysis assumes that the difference between Ft,el and Fmax,el is a result of welding stresses.
The analysis also assumes that Fmax,el should be close to the experimental limit load Fexp,el for unannealed beams.
Al Ali: The influence of welding process on the centrically compressed steel members when strengthening under load.
Al Ali.

It is seen that the trend of variations in the ultimate tensile strength (UTS) and percentage elongation (EL) of the composites with Pr content was similar, i. e. the UTS and EL of the composites increased firstly with an increase in Pr content and then decreased.
However, excess Pr (1.3%) decreases UTS and EL to 245 MPa and 1.22%, respectively.
Above studies have revealed that the variation tendency of the UTS and EL with Pr content Fig. 3.
In the present study, the addition of Pr increases UTS and EL until the amount of Pr reaches 1.0%.
After modification with 0.7 % Pr, the ultimate tensile strength (UTS) increased about 36.5% from 191 to 262 MPa and percentage elongation (EL) increased about 161.6% from 0.73 to 1.90%.

EL emission intensities were also enhanced by applying the bipolar pulses.
An ITO film was used as a bottom electrode of the EL device.
Finally, an Al electrode was formed through a stencil mask by vacuum evaporation at room temperature after depositing a PVDF/TrFE copolymer film on a composite film.
Typical structure of EL device is shown in Fig. 1.
This result is good enough for use as an insulator of the present EL devices.