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Online since: August 2011
Authors: Nan Liu Liu, Wei Xu, Hong Yu Zhen
The structure of the devices used here is: ITO/PEDOT-PSS(40nm)/PVK(30nm)/PFO: PFCz2-NPYIrm5 (60nm)/PFN(20nm)/Ba(4nm)/Al(120nm).
Table 1, CIE coordinate of the light emission from PLED (at 12V) with the structure ITO/PEDOT/PVK/EL(emitting-layer)/PFN/Ba/Al CIE PFO only 0.1% 1% 3% 5% PFCz2-NPYIrm5 only X 0.21 0.25 0.34 0.43 0.50 0.57 Y 0.24 0.26 0.32 0.37 0.40 0.43 In order to illuminate the action of PFN in the device, we fabricated another device (without PFN) with the structure of ITO/PEDOT:PSS/PVK/EL/Ba/Al.
Fig. 3(a) compares the EL spectra of the devices with or without PFN layer.
Second, the length between anode (ITO) and cathode (Al) increased 20nm when the electron-injection (PFN) was added.
Fig. 4, EL spectra of the devices with PFN at defferent voltage Conclusions In summary, high-efficiency White-phosphorescence PLEDs were obtained by inserting a water /alcohol-soluble polyelectrolyte(PFN) as an electron injection layer between the EML and the Ba/Al cathode.
Table 1, CIE coordinate of the light emission from PLED (at 12V) with the structure ITO/PEDOT/PVK/EL(emitting-layer)/PFN/Ba/Al CIE PFO only 0.1% 1% 3% 5% PFCz2-NPYIrm5 only X 0.21 0.25 0.34 0.43 0.50 0.57 Y 0.24 0.26 0.32 0.37 0.40 0.43 In order to illuminate the action of PFN in the device, we fabricated another device (without PFN) with the structure of ITO/PEDOT:PSS/PVK/EL/Ba/Al.
Fig. 3(a) compares the EL spectra of the devices with or without PFN layer.
Second, the length between anode (ITO) and cathode (Al) increased 20nm when the electron-injection (PFN) was added.
Fig. 4, EL spectra of the devices with PFN at defferent voltage Conclusions In summary, high-efficiency White-phosphorescence PLEDs were obtained by inserting a water /alcohol-soluble polyelectrolyte(PFN) as an electron injection layer between the EML and the Ba/Al cathode.
Online since: July 2011
Authors: Jing Ling Ma, Jiu Ba Wen, Gao Lin Li
Sayed Abd El-Rehim, E.F.E.
El-Sherbini.
El Shayeb, F.
Abd El Wahab, S.
Zein El Abedin.
El-Sherbini.
El Shayeb, F.
Abd El Wahab, S.
Zein El Abedin.
Online since: March 2013
Authors: Mohamad Rusop, Noor Asli Asnida, M. Ain Zubaidah, S.F.M. Yusop, Saifollah Abdullah, Mohd Husairi Fadzilah Suhaimi
Based on Fig. 1, a diode structure of Au/PSiNs/p-Si/Al was used in order to measure electroluminescence (EL) spectra.
Lastly, PL and EL spectra were measured by using PL spectrometer.
Semi-transparent electrode (Au) Porous silicon nanostructures Metal electrode (Al) P-type silicon wafer Fig. 1, A diode structure of Au/PSiNs/p-Si/Al.
The EL spectra of PSiNs samples were presented in Fig. 5.
At the beginning of the EL measurement, the involvement to the EL is mainly from the larger nanocrystallites [7, 9, 10].
Lastly, PL and EL spectra were measured by using PL spectrometer.
Semi-transparent electrode (Au) Porous silicon nanostructures Metal electrode (Al) P-type silicon wafer Fig. 1, A diode structure of Au/PSiNs/p-Si/Al.
The EL spectra of PSiNs samples were presented in Fig. 5.
At the beginning of the EL measurement, the involvement to the EL is mainly from the larger nanocrystallites [7, 9, 10].
Online since: August 2013
Authors: Hui Shan Yang, Li Shuang Wu, Yu Zhuo Pan
The current density –voltage and the luminance- voltage characteristics of devices a-d
Fig. 3 shows the EL efficiency curves as a function of luminance for the devices.
The EL efficiency is rarely changed from voltage.
Normalized EL intensity of the different devices a-d at different voltage The EL spectra and the CIE coordinates of the white light-emitting device are influenced by the each emissive layer and applied voltage.
Fig.5 shows the EL spectra of devices a–d at different applied voltages.
The normalized EL spectra of the devices shows two main emission peaks at 456 nm, 628 nm originating from DPVBi, and Ir(piq)2(acac), respectively.
The EL efficiency is rarely changed from voltage.
Normalized EL intensity of the different devices a-d at different voltage The EL spectra and the CIE coordinates of the white light-emitting device are influenced by the each emissive layer and applied voltage.
Fig.5 shows the EL spectra of devices a–d at different applied voltages.
The normalized EL spectra of the devices shows two main emission peaks at 456 nm, 628 nm originating from DPVBi, and Ir(piq)2(acac), respectively.
Online since: September 2008
Authors: Stanislav I. Soloviev, Peter M. Sandvik, Alexey Vertiatchikh, K. Dovidenko, Ho Young Cha
The EL irradiance originated from parallel lines oriented along
the [11-20] crystallographic direction.
N-metal contacts were formed by sputter deposition of a Ni film (200 nm), while p-metal contacts were formed by e-beam deposition using the following sequence: Ti(200Å)/Al(400Å)/Ti(200Å)/ Ni(1500Å).
EL images of the same APD device at different currents: 2.5 mA (a) and 4.0 mA (b).
This spectrum was in a good agreement with a similar one measured by Ono et al. from 4H-SiC p-n diodes also in avalanche conditions [3].
Very similar luminescencing stripes at breakdown were observed by Banc et al in Ref. [4].
N-metal contacts were formed by sputter deposition of a Ni film (200 nm), while p-metal contacts were formed by e-beam deposition using the following sequence: Ti(200Å)/Al(400Å)/Ti(200Å)/ Ni(1500Å).
EL images of the same APD device at different currents: 2.5 mA (a) and 4.0 mA (b).
This spectrum was in a good agreement with a similar one measured by Ono et al. from 4H-SiC p-n diodes also in avalanche conditions [3].
Very similar luminescencing stripes at breakdown were observed by Banc et al in Ref. [4].
Online since: November 2009
Authors: Yuri Estrin, T.D. Rostova, Valerij V. Zakharov, O.G. Ukolova, Sergey V. Dobatkin, A. Tchirkova
The highest strength was observed in the Al-
Mg-Mn-Zr-Sc alloy (UTS = 425MPa), in combination with elongation to failure of EL=17 %.
Particles in the Al-Mg-Zr-Sc (a), (b) and Al-Mg-Zr alloys (c), (d).
b. 200 nm 200 nm The mechanical characteristics of the alloys (yield strength, YS, ultimate tensile strength, UTS, elongation to failure, EL %, and reduction in cross-sectional area, RA %) strongly depend on the number of ECAP passes.
The best result in terms of ductility was achieved with the Al-Mg-Zr-Sc alloy by applying 6 passes of ECAP. 100 150 200 250 300 350 0 2 4 6 8 Number of passes YS, MPa 270 290 310 330 350 370 390 410 430 450 0 2 4 6 8 Number of passes UTS, MPa 20 25 30 35 40 45 0 2 4 6 8 Number of passes RA,% 10 12 14 16 18 20 0 2 4 6 8 Number of passes EL,% Al-Mg-Mn-Zr Al-Mg-Mn-Zr-Sc Fig. 11.
These characteristics are higher for the scandium-containing alloy (UTS = 425 MPa, EL = 17%). 3.
Particles in the Al-Mg-Zr-Sc (a), (b) and Al-Mg-Zr alloys (c), (d).
b. 200 nm 200 nm The mechanical characteristics of the alloys (yield strength, YS, ultimate tensile strength, UTS, elongation to failure, EL %, and reduction in cross-sectional area, RA %) strongly depend on the number of ECAP passes.
The best result in terms of ductility was achieved with the Al-Mg-Zr-Sc alloy by applying 6 passes of ECAP. 100 150 200 250 300 350 0 2 4 6 8 Number of passes YS, MPa 270 290 310 330 350 370 390 410 430 450 0 2 4 6 8 Number of passes UTS, MPa 20 25 30 35 40 45 0 2 4 6 8 Number of passes RA,% 10 12 14 16 18 20 0 2 4 6 8 Number of passes EL,% Al-Mg-Mn-Zr Al-Mg-Mn-Zr-Sc Fig. 11.
These characteristics are higher for the scandium-containing alloy (UTS = 425 MPa, EL = 17%). 3.
Online since: March 2007
Authors: Seiichi Miyazaki, Seiichiro Higashi, Katsunori Makihara, J. Xu, Hidenori Deki, Yoshihiro Kawaguchi, Hideki Murakami
After deposition of 6 periodic Si
QDs/SiO2 multilayers, the samples were annealed at 1000
o
C and then Al and semi-transparency Au
(40nm) were evaporated as back and front electrodes, respectively, to construct LED structures.
Electroluminescence was measured by applying dc bias on the Au gate electrodes while the Al back electrode was grounded.
Figure 1 is the EL spectrum under the gate bias of -15V for the present LED sample.
Figure 1 Room temperature EL and PL spectra for Si/SiO2 stacked structures with 6 periods.
It is found that the EL intensity is increased with increasing negative gate bias.
Electroluminescence was measured by applying dc bias on the Au gate electrodes while the Al back electrode was grounded.
Figure 1 is the EL spectrum under the gate bias of -15V for the present LED sample.
Figure 1 Room temperature EL and PL spectra for Si/SiO2 stacked structures with 6 periods.
It is found that the EL intensity is increased with increasing negative gate bias.
Online since: September 2008
Authors: Koji Aizawa, Yusuke Ohtani
EL emission intensities were also enhanced
by applying the bipolar pulses.
An ITO film was used as a bottom electrode of the EL device.
Finally, an Al electrode was formed through a stencil mask by vacuum evaporation at room temperature after depositing a PVDF/TrFE copolymer film on a composite film.
Typical structure of EL device is shown in Fig. 1.
This result is good enough for use as an insulator of the present EL devices.
An ITO film was used as a bottom electrode of the EL device.
Finally, an Al electrode was formed through a stencil mask by vacuum evaporation at room temperature after depositing a PVDF/TrFE copolymer film on a composite film.
Typical structure of EL device is shown in Fig. 1.
This result is good enough for use as an insulator of the present EL devices.
Online since: February 2012
Authors: Daryoush Emadi, Musbah Mahfoud
Due to the large number of controlling variables, it is difficult to accurately predict the mechanical properties of Al alloys from these variables.
Separate models were developed for YS, UTS and El%.
The error associated with %El for the permanent mould is higher than that for the sand mould.
The average value of %El is higher in the permanent mould than it is in the sand mould.
Standard Error of the Estimate (Se) Relative Standard Error (RSE) Model Sand Mould Permanent Mould Sand Mould Permanent Mould YS UTS %El YS UTS %El YS UTS %El YS UTS %El Linear 37.6 29.4 1.5 27.4 20.9 2.7 15.6% 10.0% 34.8% 12.7% 7.1% 19.3% Nonlinear 21.8 15.1 1.0 20.3 14.7 2.1 9.0% 5.2% 22.4% 9.5% 5.0% 16.1% ANN 7.7 5.7 0.4 8.1 5.6 0.9 3.2% 1.9% 10% 3.7% 1.8% 6.0% It can be seen in Table 1 that RSE for sand mould is significantly higher than those of the permanent mould.
Separate models were developed for YS, UTS and El%.
The error associated with %El for the permanent mould is higher than that for the sand mould.
The average value of %El is higher in the permanent mould than it is in the sand mould.
Standard Error of the Estimate (Se) Relative Standard Error (RSE) Model Sand Mould Permanent Mould Sand Mould Permanent Mould YS UTS %El YS UTS %El YS UTS %El YS UTS %El Linear 37.6 29.4 1.5 27.4 20.9 2.7 15.6% 10.0% 34.8% 12.7% 7.1% 19.3% Nonlinear 21.8 15.1 1.0 20.3 14.7 2.1 9.0% 5.2% 22.4% 9.5% 5.0% 16.1% ANN 7.7 5.7 0.4 8.1 5.6 0.9 3.2% 1.9% 10% 3.7% 1.8% 6.0% It can be seen in Table 1 that RSE for sand mould is significantly higher than those of the permanent mould.
Online since: May 2019
Authors: Galal Elmanfe, Osama Khreit, Omukalthum Abduljalil
Determination of PPD in Hair Dyes Collected from
Local Markets in El-Bieda City - Libya
Galal Elmanfe1,3,a*, Osama Khreit 2,3,b and Omukalthum Abduljalil3,c
1Chemistry department, Faculty of Science, Omar Al-Mukhtar University, El-Bieda, P.O 919, Libya
2Pharmacology , Toxicology and Physiology department, Faculty of Veterinary, Omar Al-Mukhtar
University, El-Bieda, P.O 919, Libya
3Almukhtar Centre of Rerearch, Consaltation, Technique Services and training,Omar Al-Mukhtar University, El-Bieda, P.O 919, Libya
a*galal.elmanfe@omu.edu.ly, bosama.khreit@omu.edu.ly, cearthmooninsky@gmail.com
Keywords: PPD ; Hair Dyes ; Methanol and HPLC.
In the presented study, ten hair dye samples were collected from local markets in El-Bieda - Libya.
Samples collection : Ten samples were collected from local markets in El-Beida- Libya.
Al-Suwaidi and H.
El Karni, T.
In the presented study, ten hair dye samples were collected from local markets in El-Bieda - Libya.
Samples collection : Ten samples were collected from local markets in El-Beida- Libya.
Al-Suwaidi and H.
El Karni, T.