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Because of the difference in physical parameters such as lattice constants, thermal expansion coefficients and ionicity between ZnSe and Si, this material system suffers from a number of crystalline defects, which have a deleterious effect on the optical and electronic properties and may be responsible for the reduction of the device lifetime.
Crystal structure of ZnSe thin films is zincblende structure with the preferred orientation of (111), even though the substrate has (400) orientation, those peaks correspond to the reflection structure and were identified by comparing them to the JCPDS card no. 80-8 (for ZnSe) and no. 27-1402 (for Si).

A number of techniques for synthesizing doped ZnO nanostructures have been developed.
The diffraction peaks matched well with the hexagonal wurtzite structure of ZnO (lattice constant a = 0.3249 nm and c = 0.5205 nm, JCPDS Card No.36-1451).

After heat-treatment at different temperatures, significant diffraction peaks appear, the main crystalline phase is attributed to LiTi2(PO4)3 [14] similar to lithium-analogue NASICON structure (JCPDS card 35-0754) and the other minor peaks belong to AlPO4, TiO2 and unknown crystalline phase.
Certainly, the pre-exponential factor related to the number density had an effect on the ionic transfers.

It is found that all recorded peaks were perfectly matched with NiO and SnO2 peaks according to JCPDS data.
The NiO peaks were matched with JCPDS card No. 71-1179 attribute cubic crystal structure and for SnO2 peaks were matched with JCPDS card No. 02-1340 attribute tetragonal crystal structure [32, 33].
The increased resistivity at this optimal doping level suggests a higher density of charge carriers and a greater number of oxygen vacancies, which play a crucial role in the interaction with ethanol molecules.
At this doping concentration, the formation of oxygen vacancies is maximized, which increases the number of active sites available for ethanol adsorption [60].

The appearance of 38.08°, 44.02°, 64.45°, 77.64° diffractive peaks (For Ag2O - JCPDS card number 76–1393) and disappearance of 31.20°, 40.32° peaks indicate the formation of Cu-MOF/Ag2O.
In addition to this, a peak at 25.08° confirms the presence of rGO in MOF/rGO composite with JCPDS no. 75−2078 [58].

The spectra for SnO2 correspond to cassiterite structures (joint Committee on Powder Diffraction Standards, JCPDS, card nos. 41-1445) without any indication of other crystalline byproducts.
The maximum responses to H2S of CuO coated SnO2 were higher than that of the CuO doped SnO2, which may be related to the number of electron channel.

The interval between the spray nozzle and the collector was maintained at (10 ± 1 cm), the spray solution volume was (50 ml), the spraying number was (20), and the interval between the sprayings was (5 sec).
The X-ray diffraction patterns outcome exhibited matching with the standard value in (JCPDS card no. 05-0640).

The diffraction pattern of un-doped CeO2 compound and their reflections according to JCPDS 34-0394 card, can be observed in figure 3 (bottom spectrum).
Moreover, with increasing either In or Ru atoms inside the cerium oxide lattice, the number of carriers augment promoting modifications in the physical properties, as concluded from our results.

However, the actual use of the material is largely hampered by the quick capacity fading over an several number of cycles, which is considered to be caused by the large volume expansion-contraction occurred during the charge-discharge process. [11] In order to overcome this crucial problem, some strategies have been proposed.
All the identified peaks can be assigned to tetragonal SnO2 (JCPDS card no.41-1445, S.G.

The pure ZnO displayed the typical wurtzite structure according to the standardized JCPDS card.
The generated electron-hole pairs had higher oxidation-reduction ability, although the numbers were lesser than that of pure ZnO.