Papers by Author: S. Soubatch

Abstract: The atomic structure of the 4H-SiC(11 2 0) surface including possible phase transformations via Si deposition and annealing has been investigated using low energy electron diffraction (LEED), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The sample is initially prepared by hydrogen etching before loading into the ultra-high vacuum system. The sample is then out-gassed to remove oxygen from the surface. To explore the existence of ordered surface phases, Si is deposited on the sample at 850°C for 15 minutes followed by a series of sequential annealing steps. Throughout this process, the surface is monitored by LEED, AES and XPS. LEED shows that the surface continuously maintains a (1×1) periodicity. Yet, two unique and distinguishable (1×1) phases can be identified. The changes between these phases are clearly demonstrated by the LEED spot intensities. Simultaneously, the Auger and XPS data show a decrease in Si intensity.

Abstract: Commercial on-axis wafers of 4H-SiC(0001) were etched in a standard reactor for chemical vapor deposition (CVD) using molecular hydrogen flux in order to improve the structure and morphology of the surface. The substrate temperature during etching was varied from 1400 to 1600°C. Characterization of the surface morphology was performed using optical and atomic force microscopy (AFM). Low-energy electron diffraction (LEED) and X-ray photoelectron spectroscopy (XPS) were also used to examine the surface structure and chemical composition of the samples. The sample of best quality was obtained for an etching temperature of 1400°C. Its surface is ° × 30 ) 3 3 ( R reconstructed and covered by an ordered “silicate” layer. Increasing the substrate temperature during etching to 1500°C leads to enhanced step-bunching and the formation of macroterraces. At 1600°C distinct depressions appear on the surface, presumably from etching of structural defects such as screw dislocations. Subsequent annealing at 1000°C in ultra-high vacuum (UHV) removes the surface oxide and produces the ° × 30 ) 3 3 ( R surface phase of clean 4HSiC( 0001).

Abstract: Low-energy electron diffraction (LEED), scanning tunneling microscopy (STM) and spectroscopy (STS), and Auger electron spectroscopy (AES) were used for a study of silver interaction with the (3×3) and ° × 30 ) 3 3 ( R surface phases of clean 4H-SiC(0001). The development of the surface structure and morphology after room temperature (RT) deposition and annealing was investigated. On the (3×3) phase silver forms small clusters leaving the initial reconstruction intact. At high coverages three-dimensional (3D) growth (Vollmer-Weber mode) was found. For the ° × 30 ) 3 3 ( R phase the initial structure seems more disturbed upon Ag deposition and thermally induced diffusion. Yet, no new surface phase develops. In both cases Ag can be removed from the surface by annealing, but Ag appears to be more stable on the ° × 30 ) 3 3 ( R phase according to AES.