Books by Keyword: Crystal Growth

Description: Advanced semiconductor technologies have been making significant advancements through the creation and application of new materials and processes that surpass traditional silicon's limitations. The wide-bandgap semiconductors such as Silicon Carbide and Gallium Nitride offer unprecedented opportunities for advancements in high-power and high-frequency microelectronic devices. The presented special edition will be useful to engineers and researchers whose activity is related to technologies of semiconductor structures growth for power electronics and microelectronics devices production.

Description: The 39th volume of the Journal of Metastable and Nanocrystalline Materials includes articles that review the zinc oxide crystal growth process with and without adding the graphene oxide, as well as analyse the microstructure and semiconductor properties of finished materials. The results of transmission electron microscope analysis of polycrystalline silicon for thin film solar cells and investigation of methods for synthesis and properties study of nickel-zinc nanoferrites and cadmium-substituted cobalt ferrite nanoparticles are also presented in this volume. This issue will be helpful to specialists in materials science and applied nanotechnologies.

Description: The special edition includes articles that represented the latest research results and engineering solutions in the area of electronic device design and production. This special edition will be interesting to specialists in semiconductor power device production, microelectronics and optoelectronics.

Description: This volume contains papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), held in Kyoto, Japan, from September 29 through October 4, 2019. The collection reflects the results of the last research efforts on properties of silicon carbide and related materials for the goal of their use in power electronics. Presented articles, cover the wide range of topics: crystal growth and wafer manufacturing, characterization and defect engineering, MOS gate stacks and device processing, power devices, and integrated circuits packaging.

Description: This collection presents a selection of papers submitted on the three conferences: the 2nd International Conference on Sensors, Materials and Manufacturing (ICSMM 2018, November 19-21, 2018, Taiwan); International Conference on Materials Sciences and Nanomaterials (ICMSN 2018, July 11-13, 2018, United Kingdom) and the 2nd International Conference on Materials and Intelligent Manufacturing (ICMIM 2018, August 24-26, 2018, Japan). We hope that this edition will be interesting and useful for many specialists which activity related to modern materials science and development of the various materials processing and synthesis technologies.

Description: The Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) was held on July 9-12, 2018 in Beijing, China. This collection compiled by results of this conference and reflect new developments in the areas of wide bandgap semiconductors (SiC, GaN, Ga₂O₃, and etc.) and their device fabrication, including advances in the bulk and epitaxial growth, material structure and property, photoelectron and electronic device. We hope that this edition will be interesting and useful for many specialists from the area of research and designing of semiconductor materials and semiconductor devices.

Description: Collection of selected, peer reviewed papers from the 2nd International Conference on Functional Materials Science.
The 66 papers are grouped as follows:
Chapter 1: Materials in Environmental Engineering;
Chapter 2: Materials in Biomedical Engineering;
Chapter 3: Materials for Devices of Conversion and Storage of Energy;
Chapter 4: Ferromagnetic and Superconducting Materials;
Chapter 5: Materials for Sensors;
Chapter 6: Researching and Designing of Fabrication Technologies;
Chapter 7: Applied Research Techniques of Phenomena in Solid State Materials

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The aim of this volume is to accelerate the exchange of information on the best practices for CAD, CAM, Manufacturing, Mechanical Engineering, Modeling and Simulation, etc. Engineers and scientists in academia, industry and government here address the most innovative research and development work, including technical challenges and social and economic issues, and discuss their ideas, results, work-in-progress and experience concerning all aspects of Computer-Aided Design, Manufacturing, Modeling and Simulation.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Advanced materials offer exceptional properties and permit engineers to design novel and high-quality products. These peer-reviewed papers cover major topics such as nano, ferroelectric, magnetic, meta, polymer, non-linear optical, composite, thermoelectric, bio, catalytic–inorganic, semiconductor and superconducting materials. It is hard to imagine a more wide-ranging treatment of such materials.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This special collection of 39 peer-reviewed papers imparts the latest findings related to silicon science and advanced micro-device engineering. The papers are grouped into the chapters: Materials Science; Chemical Science and Technology; Nano-Science and Technology; Photonic Devices and Technology; Novel Measurement and System Technology; Information and Communication Engineering; thus offering an up-to-date overview of the subject matter.