Books by Keyword: Doping

Description: Silicon carbide is the semiconductor of choice for new applications including electric power devices, high frequency devices, high temperature devices, and radiation resistant devices. The III-Nitride compound semiconductors are well suited for optoelectronics and are promising materials for high frequency devices. This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials – 1999 (ICSCRM’99), held October 10-15, 1999, at Research Triangle Park, North Carolina.

Description: This book is the result of twenty years of experience on the fabrication of active micro-cooling systems, the fabrication of electronic devices (radiation and magnetic sensors, transistors), the fabrication of optical devices (new green LED), and the adaptation of silicon simulation software to diamond. This includes the integration of the current transport models of diamond. The book emphasize the subjects' substrate selection, mechanical and chemical structuring, doping, and metallization. Also included is simulation as a tool to predict the results of the technological steps. Though a state of the art method is far behind in comparison to the silicon and gallium arsenide growth we assume the same state as exists in these technologies, namely that the diamond substrates are commercially available.

Description: Ever since the work of W.E. Spear and P.G. LeComber had proved that an amorphous semiconductor could indeed also be substitutionally doped, research in the respective field has seen an nearly unprecedented development. The role of hydrogen in atomic and electronic structure as well as in the doping mechanism remains an outstanding problem addressed both to theoreticians and experimentalists, and a highly interesting challenge both to the scientist as well as the engineer.

Description: I. TECHNIQUES . II. d DOPING . III. QUANTUM WELLS . IV. HYDROGEN IN SEMICONDUCTORS . V. BOUND EXCITONS . VI. IMPURITIES IN SILICON . VII. IMPURITIES IN Ge AND GexSi1-x. VIII. IMPURITIES IN COMPOUND SEMICONDUCTORS . IX. DX CENTRES .

Description: The DX center is a defect present in Gallium Arsenide and related alloys when these materials are doped with n-type impurities.