Books by Keyword: Gallium Nitride (GaN)

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The 104 peer-reviewed papers included here were selected from those presented at the International Conference on Nanomaterials Synthesis and Characterization (INSC2011) held at the Mines Wellness Hotel, Seri Kembangan, Selangor, Malaysia from the 4th to 5th July 2011. The volume mainly covers the synthesis of nanomaterials and related researches and will bring the reader fully up to date with these topics.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This volume contains the proceedings of the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, on August 29th – September 2nd. The editions of ECSCRM have developed over the years and, today, ECSCRM is the leading European conference in the field of ‘SiC and related materials and their applications’. This volume is divided into five chapters ranging from ‘SiC growth’ to ‘Biosystems’ and thus represents a comprehensive coverage of the field.

Description: Volume is indexed by Thomson Reuters BCI (WoS).
The motivation for this special-topic volume was two-fold. Among the various techniques for probing material properties at the atomic scale, PAC is a somewhat hidden gem. This is partly because PAC requires the use of radioisotopes; thus rendering it almost useless as a non-destructive characterization method. Moreover, there are relatively few PAC isotopes available; so it is not always possible to apply PAC to the most technologically pressing problems. Thus, PAC studies of materials are often more fundamental, and less applied, in nature. One of the goals of this volume was to raise the profile of PAC: in particular, for materials scientists, whose research could well benefit from adding this method to their tool-box. The second goal was to provide a single-source reference which illustrated the applicability of PAC to a wide range of materials. Part 1 consists of a number of comprehensive review articles concerning the technique itself and its state-of-the-art application to magnetic materials, ceramic oxides and nanostructured materials. Part 2 consists of papers which describe ongoing work on TiO2 nanomaterials, L12-structured intermetallic compounds, and wide-bandgap semiconductors. Overall, this is a valuable and unique guide to the subject.

Description: Wide-bandgap semiconductors, such as silicon carbide and group-III nitrides have attracted increasing attention as promising target materials for high-power, high-frequency and high-temperature electronics use, as well as exploitation as short-wavelength light-emitters.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Volume is indexed by Thomson Reuters BCI (WoS).
This special-topic volume‚ Advances in Light-Emitting Materials’, makes an important contribution to the field of silicon and III-nitride semiconductors. It begins with a brief history of visible-light emitting diodes. However, silicon is currently expanding from micro-electronics and into photonics. Due to its unsuitable band-gap, it has not previously been the material-of-choice for opto-electronic integration. That is now beginning to change and silicon devices have been developed which have the capability to emit, modulate, guide and detect light and which can be combined with microelectronics to form electronic and photonic integrated circuits.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This book consists of a collection of 74 original peer-reviewed papers. They cover a wide range of topics in the interesting field of nano-structure related semiconductor photonics; a field which encompasses quantum dots, quantum wire, nano-wire, nano-rods, nano-crystals, photonic crystals, ZnO-based materials, III-V compound semiconductors, Si photonics and organic optoelectronic devices.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The last five decades have seen an explosion of interest in exploring the possibilities of new materials for industrial and commercial applications. Materials Technology is now recognized as being one of the most important factors driving the development and growth of a nation’s economy. The sciences of design, processing, manufacturing and materials utilization are crucial elements contributing to the growth of new industries. The need for new discoveries in Materials Science has encouraged scientists from around the world to meet regularly and to discuss the latest advances and innovations.

Description: This special issue of Materials Science Forum contains the papers which were presented at the 1st International Meeting on Applied Physics (APHYS-2003), held in Badajoz (Spain), and more specifically, the selected papers which were presented during the conference sessions on Interfaces in Colloidal and Particulate Systems, covering Imaging Techniques, Microscopy; Nanoscience and Nanotechnology, Bioengineered Materials, Applied Materials Science / Solid State Physics & Chemistry / Advanced and Functional Materials and Semiconductor Materials and Devices.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: This seventh volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VI (Volumes 221-223) and the end of September 2004 (allowing for vagaries of journal availability).