Books by Keyword: Germanium

Description: This proceedings volume contains the proceedings of all presentations of the 16th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) 2023. The subject matter of the UCPSS symposium is ultra-clean processing, isotropic selective etching and surface preparation technology in all steps of the fabrication of micro-and nano-electronic integrated circuits. This volume describes the recent progress in the field of ultra clean surfaces, surface cleaning and preparation for the production of micro- and nano-electronic integrated circuits and related subjects. This involves a wide variety of surfaces of mixed composition and with nano-topography. The goal of the processes is to obtain nano precise etching and cleaning resulting in ultra clean surfaces with a very high degree of perfection, i.e. with minimal amounts of residues or defects. This comprises different surface and cleaning steps throughout the entire device manufacturing process.

Description:

This volume of "Advanced Engineering Forum" presents multidisciplinary high-quality scientific research dedicated to the evaluation of mechanical properties reinforced concrete, treatment of domestic wastewater, optimizing power flow and energy consumption using Artificial Neural Networks, characterization composite cathodes for Li-S batteries, design and preparation of a new graded hetero-structure material, design of germanium-based FinFET and performance analysis of the impact of possible interference between IEEE 802.11 and IEEE 802.16 devices. The volume will be useful for researchers, professionals, students, and stakeholders to explore modern solutions to various engineering fields.

Description: This special volume is devoted to the new and fast evolving field of physics and technology of functional nanomaterials and devices. The published review and original research papers contain new experimental and theoretical results in the field of fabrication and utilization of functional nanomaterials and devices for modern micro- and nanoelectronics with special emphasis on technology, physics and diagnostics. The problems of application of new materials, structures and devices for low power consumption and energy harvesting as well as for nanosensors (of pressure, temperature, biological species), optoelectronic devices and micro/nano-mechanical systems are addressed and discussed.

Description: The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processing; IX. Germanium-based devices and materials; X. Semiconductors other than silicon and germanium; XI. Nanostructures and new materials systems.

Description: The International Symposium on Ultra-Clean Processing of Semiconductor Surfaces (UCPSS) is a bi-annual conference which has been organized by IMEC since 1992.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The scope of the symposium includes all issues related to contamination, cleaning and surface preparation in mainstream large-scale Integrated Circuit manufacture. At first, silicon was typically the main semiconductor of interest. As other semiconducting materials such as SiGe, SiC, Ge and III-V compounds came under consideration for future devices, the scope was broadened so as to include these materials. Parallelling the fast-moving CMOS industry, the photovoltaic industry has also recognized the need to make improvements in cleaning. Moreover, in order to promote these semiconductor cleaning activities in PV, it was decided to add a special session focused on this topic.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The papers contained herein cover the most important and timely issues in the field of “Gettering and Defect Engineering in Semiconductor Technology”, ranging from the theoretical analysis of defect problems to practical engineering solutions, with the emphasis on Si-based materials. Apart from the traditional topics of defect and materials engineering, characterization, modeling and simulation, and the co-integration of various material classes, topics such as materials for solar cells and photonics are discussed. Defects in graphene and in nanocrystals and nanowires are also treated, making this a very up-to-date survey of the field.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Silicon ultra-large scale integrated circuits (ULSIs) are now faced with various physical limits to further scaling. Therefore, it is very important to establish the fundamental science and technology required to produce nano-scale complementary metal-oxide-semiconductor devices (Nano-CMOS) having high performance, new functionalities and larger-scale integration. The scope of this book covers: - Nano-scale complementary metal-oxide-semiconductor devices (Nano-CMOS), - Novel functional devices, materials, and nanoprocessing technologies, - Nano-bio physics and technologies for future nano devices, - Variability control technologies and Signal integrity. This makes it a very useful handbook on the subject.

Description: This second volume in a new series covering entirely general results in the fields of defects and diffusion includes 356 abstracts of papers which appeared between the end of 2009 and the end of 2010. As well as the abstracts, the volume includes original papers on theory/simulation, semiconductors and metals: “Predicting Diffusion Coefficients from First Principles …” (Mantina, Chen & Liu), “Gouge Assessment for Pipes …” (Meliani, Pluvinage & Capelle), “Simulation of the Impact Behaviour of … Hollow Sphere Structures” (Ferrano, Speich, Rimkus, Merkel & Öchsner), “Elastic-Plastic Fracture Mechanics Model …” (Liao), “Calculation of Fracture Toughness for Hydrogen Embrittlement …” (Mahdavi & Mashhadi), “… Method to Describe the Role of Diffusion in Catalyst Design” (Zeynali), “… Axial Shift and Spin Hamiltonian Parameters for Mn2+ in CdS …” (Wang, Wu, Hu & Xu), “Structure and Electronic Properties of Evaporated Thin Films of Lead Sulfide” (Ibrahim), “Acoustic Emission during Isothermal Oxidation of … Steel” (Jha, Mishra & Ojha), “… Carbon Content versus Heating Temperature in Austenitizing of Cast Iron” (Gong & Xiang), “Exploration of Parameters of Ashcroft’s Potential …” (Ghorai), Effect of Tribological Parameters upon Mechanical Wear …” (El Azizi, Meliani, Belalia & Benamar)

Description: This twelfth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective XI (Volume 293) and the end of September 2010 (journal availability permitting).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This collection of 86 peer-reviewed papers covers all aspects of the use of ultra-clean technology for large-scale integration on semiconductors, and cleaning and contamination-control in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processing.