Books by Keyword: Germanium

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors’ fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This proceedings volume contains 126 contributions from the 11th international meeting on Gettering and Defect Engineering in Semiconductor Technology GADEST 2005 held at “La Badine” at the Giens peninsula south of France.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This book is sub-divided into 10 different topical sections; each dealing with important issues in surface cleaning and preparation.

Description: This fourth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2000 to mid-2001. The scope of this coverage includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics Retrospective" series. The increasing interest in ceramic-type semiconductors is again reflected by the invited papers, which include an extensive review of the particular problems involved in growing GaN films on sapphire substrates. Nevertheless, established semiconductors continue to spring surprises and to offer new problems and these are also addressed here by a number of further detailed reviews of work on Si, InP and InGaP. Finally, new results are to be found here concerning diffusive processes and defect behaviour in Ge, GeSi, InGaAs, Si and ZnSe. Altogether, these 8 long reviews, 9 research papers and 752 selected abstracts provide an invaluable and up-to-date insight into current and future trends in semiconductor theory, processing and applications.

Description: Ever since the invention of the transistor, a fantastic and continual growth in silicon technology has been witnessed; leading to yet more complex functions and higher densities of devices. The current book summarises the key issues of this field.

Among other topics, the outlook for silicon wafer technology and silicon materials engineering in the next millennium is reviewed and new approaches to the production of a 200 GHz silicon-based devices are described. Possible applications of dislocation luminescence in silicon are discussed as well as the hopes for, and limitations of, the Si:Er - based 1.54 mm emitter. Various properties of silicon-based materials and heterojunctions are characterised by using novel and state-of-the-art measurement techniques. Hydrogen- and oxygen-related defects, rare-earth impurities as well as radiation and gettering effects are discussed from various points of view.

Description: The volume presents the proceedings of the 5th International Conference on Shallow Impurities in Semiconductors, held in Kobe, Japan, August 1992.

Description: The volume presents approximately 30 invited contributions.