Books by Keyword: Hydrogen

Description: The 49 peer-reviewed papers collected here together offer a plenitude of up-to-date information on “Advanced Fossil Fuel Energy Technologies, Hydrogen Production and Storage, Fuel Cells, Electrochemical Energy Storage Systems”. The papers are conveniently arranged into MATERIALS FOR ADVANCED FOSSIL FUEL ENERGY TECHNOLOGIES, MATERIALS IN HYDROGEN PRODUCTION AND STORAGE, Hydrogen Production, Hydrogen Storage, FUEL CELLS: MATERIALS AND TECHNOLOGY CHALLENGES, MATERIALS IN ELECTROCHEMICAL ENERGY STORAGE SYSTEMS.

Description: This eleventh volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective X (Volume 278) and the end of August 2009 (journal availability permitting).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors’ fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed

Description: This extensive collection of papers presents new results focussing on advanced nanomaterials and their processing.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Over 460 papers have been selected, for this special issue, covering three main fields: Electronic Materials Processing and Fabrication, Development of Functional Materials, and Nano and Structural Materials., These are the essential foundations of the NanoMaterials currently undergoing research and development.

Description: The diffusion of atoms is an inherent feature of matter, and the rules which describe the phenomenon are important from both the purely practical and the theoretical perspectives: it is a major rate-controlling process in phase transformations, crystal growth, recrystallization and recovery, creep, sintering, surface treatment and many other situations. Being typically a non-equilibrium macroscopic phenomenon, diffusion can be properly described in terms of the thermodynamics of irreversible processes. At the same time, phenomenological diffusion characteristics represent the mean values of microscopic parameters and reflect the microscopic structure of matter. In the latter case, they contribute to providing a deeper understanding of the physical background to the observed behavior of matter in general.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This proceedings volume contains 126 contributions from the 11th international meeting on Gettering and Defect Engineering in Semiconductor Technology GADEST 2005 held at “La Badine” at the Giens peninsula south of France.

Description: This sixth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective V (Volumes 218-220) and the end of April 2004 (journal availability permitting).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This volume is a collection of papers presented at the 10th International Autumn Meeting on "Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003," which took place from the 21st to the 26th of September 2003 at the Seehotel Zeuthen, in the state of Brandenburg, Germany. The Seehotel Zeuthen, near Berlin, was an excellent location at which to provide a forum for interactions between scientists and engineers engaged in the field of semiconductor defect physics, materials science and technology; and to reflect upon aspects of the coming era of conversion from micro-electronics to nano-electronics. In addition, a particular ambition was to strengthen the interactions and exchanges between communities working in the fields of crystalline silicon for electronics and photovoltaics.

Description: Modern semiconductor devices rely upon precise defect engineering. On the one hand: defects are the components needed to generate the electronic architecture of the device. On the other hand: they may – if not carefully controlled– induce failure of that device. During the past fifty years, the electrical and optical properties of defects, their generation, transport, clustering and reactions between them have been investigated intensively. Yet the development of semiconductor technology remains closely connected to the advances made in defect science and engineering. Compared to metals, defect control in silicon is significantly complicated by the open structure of its lattice. As a result, reactions between defects, even at room temperature, have become a central issue in defect engineering.

Description: Gettering and Defect Engineering in Semiconductor Technology are discussed here,with particular emphasis being placed on device applications. Fundamental aspects,as well as technological problems which are associated with defects in electronic materials and devices, are addressed.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The topics in this volume were selected on the basis that single-crystal Si, and Si-based, semiconductors will dominate microelectronics until far into the 21st century. The main reason for the overwhelming success of silicon technology is economic: the production cost per area increases by a factor of 5, or even 10, on going from 200 mm Si wafers to compound semiconductors or other substrate materials.