Books by Keyword: Hydrogen

Description: Ever since the invention of the transistor, a fantastic and continual growth in silicon technology has been witnessed; leading to yet more complex functions and higher densities of devices. The current book summarises the key issues of this field.

Among other topics, the outlook for silicon wafer technology and silicon materials engineering in the next millennium is reviewed and new approaches to the production of a 200 GHz silicon-based devices are described. Possible applications of dislocation luminescence in silicon are discussed as well as the hopes for, and limitations of, the Si:Er - based 1.54 mm emitter. Various properties of silicon-based materials and heterojunctions are characterised by using novel and state-of-the-art measurement techniques. Hydrogen- and oxygen-related defects, rare-earth impurities as well as radiation and gettering effects are discussed from various points of view.

Description: Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Journal issue

Description: Journal issue

Description: Journal issue

Description: For more then one century it has been observed that stress corrosion cracking (SCC) and corrosion fatigue (CF) corresponds to synergetic effects between corrosion and mechanics. Researchers and engineers have tried to translate such effects through empirical damage laws, in particular to predict crack velocities in metallic materials for the nuclear, aeronautical and chemical industries. Nevertheless the precise nature of these synergetic effects is still difficult to determine and quantify, mainly because of the localization of the damage events.
One of the objective of the current publication is to review in details what is known about these deleterious synergetic effects which lead to SCC and CF. The matter of the book clearly corresponds to an interdisciplinary field. Bases in materials science, corrosion, theory of dislocations and chemistry of surfaces are supposed to be known, even if some elements will be briefly introduced.

Description: The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.

Description: This book covers the physics and technology of polycrystalline semiconductors by presenting the work of scientists who are concerned with a variety of polycrystalline materials in research, technology, and application, with a view to bridge the gap between fundamental and technological aspects of polycrystalline semiconductors.

Description: State-of-the-art reviews on all the major areas of interest are brought together in this book, namely the role of hydrogen during epitaxial growth, its entry into the material during processing, its subsequent diffusivity and bonding with dopants, other impurities or defects, its effect on device performance and reliability and positive uses for hydrogen in passivating surfaces.

Description: This comprehensive issue presents 297 papers that cover a broad range of topics in the fundamental science of imperfections in semiconductor materials including the creation and/or origin, structure, electronic, optical, thermodynamical and chemical properties of defects, often also with strong relevance to technological problems in semiconductor devices.