Description: The present book sums up the most recent advances in the investigation of nanocrystallization. Many new nanocrystalline materials with promising magnetic and mechanical properties have been developed. For example, soft-magnetic nanocrystalline Fe-based alloys, hard-soft nanocrystalline Fe/FeNdB-type magnets and light Al-based nanostructures with attractive mechanical properties.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Defects in Semiconductors 19

Edited by: Gordon Davies and Maria Helena Nazaré

Online since: December 1997

Description: Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Gettering and Defect Engineering in Semiconductor Technology VII

Edited by: C. Claeys, J. Vanhellemont, H. Richter and M. Kittler

Online since: July 1997

Description: Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield.

Polycrystalline Semiconductors IV

Edited by: S. Pizzini, H.P. Strunk and J.H. Werner

Online since: May 1996

Description: The present volume covers many aspects of semiconductors, over the wide structural range from nano- to large-grained crystalline. Scientists working on polycrystalline semiconductors, with various chemistries, here review fundamental research, technology and applications.

Defects in Semiconductors 18

Edited by: M. Suezawa and H. Katayama-Yoshida

Online since: November 1995

Description: The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.

Shallow Impurities in Semiconductors V

Edited by: Tsunemasa Taguchi

Online since: January 1993

Description: The volume presents the proceedings of the 5th International Conference on Shallow Impurities in Semiconductors, held in Kobe, Japan, August 1992.