Books by Keyword: Positron Annihilation

Books

Edited by: Dr. David J. Fisher
Online since: September 2005
Description: This seventh volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VI (Volumes 226-228) and the end of July 2005 (journal availability permitting).
Edited by: Toshio Hyodo, Yoshinori Kobayashi, Yasuyuki Nagashima, Haruo Saito
Online since: January 2004
Description: There is no doubt that, when it comes to the study of the structures and defects of materials, there is presently no technique that rivals positron annihilation. The increasing demands for higher accuracy and reliability provide a constant stimulus to the field, and the present work presents the newest and most important scientific discoveries made in the field of positron annihilation.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Edited by: Werner Triftshäuser, Gottfried Kögel and Peter Sperr
Online since: April 2001
Description: When it comes to studying the structures and defects of materials, there is presently no technique that is superior to positron annihilation. The increasing demands for higher accuracy and reliability provide a constant stimulus to the field, and the present book relates the newest and most important scientific discoveries made in the field of positron annihilation.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Edited by: Gordon Davies and Maria Helena Nazaré
Online since: December 1997
Description: Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Edited by: Y. C. Jean, Morten Eldrup, David M. Schrader, Roy N. West
Online since: September 1997
Description: For one and a half decades, the application of positron annihilation to condensed-matter physics concentrated on the study of the Fermi surfaces of metals and alloys. As other, often more powerful, techniques for performing this type of study were developed, it appeared that condensed-matter positron physics was going to be relegated to being a niche interest. However, the situation changed dramatically when it was found that measurements of positron annihilation in metals were sensitive to the structures of well-known defects. This discovery, and subsequent research made it a major tool in materials science.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Edited by: Dr. David J. Fisher
Online since: March 1996
Description: Journal issue
Edited by: M. Suezawa and H. Katayama-Yoshida
Online since: November 1995
Description: The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.
Edited by: Yuan-Jin He, Bi-Song Cao and Y.C. Jean
Online since: November 1994
Description: Positron Annihilation - ICPA-10 presents new results and ideas of researchers who seek more profound understanding of the nature of positron annihilation. All these scientific and technological thoughts are included in these two-volume proceedings, which contain 7 review talks, 203 contributed papers (among them, 20 are invited), and 3 summary talks. The volume is complete with keyword and author indices.
Edited by: Helmut Heinrich and Wolfgang Jantsch
Online since: October 1993
Description: This comprehensive issue presents 297 papers that cover a broad range of topics in the fundamental science of imperfections in semiconductor materials including the creation and/or origin, structure, electronic, optical, thermodynamical and chemical properties of defects, often also with strong relevance to technological problems in semiconductor devices.
Edited by: P. Duhaj, P. Mrafko and P. Svec
Online since: January 1993
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The volume presents 120 papers covering all important aspects of amorphous metallic materials.
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