Books by Keyword: Semiconductors

Description: Defect and Diffusion Forum Vol. 308

Description: Volume is indexed by Thomson Reuters BCI (WoS).
The study of materials in terms of their effectiveness/usefulness in device application is important to the technological development of a country: countries which concentrate on the growth and characterization of technologically important materials become developed countries. Hence, the growth and characterization of new materials is very important to many countries. This especially topical volume on the Characterization of Technological Materials reports on the technology and characterization of important technological materials. The systems covered include thermo-electric materials, thin films, nano sensor materials and semiconductors.

Description: Volume is indexed by Thomson Reuters BCI (WoS).
The electronic properties of solids have become of increasing importance in the age of information technology. The study of solids and materials, while having originated from the disciplines of physics and chemistry, has evolved independently over the past few decades. The classical treatment of solid-state physics, which emphasized classifications, theories and fundamental physical principles, is no longer able to bridge the gap between materials advances and applications. In particular, the more recent developments in device physics and technology have not necessarily been driven by new concepts in physics or new materials, but rather by the ability of engineers to control crystal structures and properties better via advances in crystal growth and patterning techniques. In many cases, new applications simply arise from the adaption of conventional ideas to interdisciplinary areas. One example is that of recent advances which rely heavily upon the availability of the sub-micron technology developed by the semiconductor industry. Another example is the emergence of nanotechnology.

Description: It is well-known that fossil fuels are being rapidly depleted, and that atomic power is rejected by many people. As a consequence, there is a strong trend towards alternative sources such as wind, photovoltaics, solar heat and biomass. Strangely enough, quite another power source is generally neglected: namely, the thermoelectric generator (a device which converts heat, i.e. thermal energy, directly into electrical energy). The reason for this neglect is probably the low conversion efficiency, which is of the order of a few percent at most. However, there are two arguments in favor of the thermoelectric generator. Firstly, we might in effect be at the same point as we were in the early stages of photovoltaics use (it was only in 1954 that the first attractive solar cells, with efficiencies of around 4% were produced). Today, even large modules attain 20%. Secondly, the potential applications of thermoelectric generators are very tempting. Wherever heat is generated, it is amenable to electrical conversion. Energy harvesting via a thermoelectric generator may be accompanied by a further benefit: The use of a solar module inevitably leads to a drastic temperature rise. A thermoelectric generator reduces the temperature rise and therefore offers a double benefit.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The 20th century was a period during which many new sciences and engineering techniques appeared and evolved, and were applied to industrial applications. Towards the end of that century, however, it was recognized that - in many cases - the industrial technologies that underpin current-day society suffered from wider sociogical deficiencies. The usual engineering approaches began to face many difficulties which arose from the high habitual levels of consumption of energy and resources.. Energy sources, and supplies of various resources, have already begun to diminish in the 21st century. These limitations on energy and resources require science and technology to adapt quickly to this new regimen.

Description: This collection of abstracts of experimental and theoretical papers on the subject of diffusion in silicon is intended to complement earlier volumes (DDF153-155) which covered the previous decade’s work on the same topic.
The abstracts are grouped according to the diffusing species in question. The latter comprise Ag, Al, As, Au, B, Ba, Be, C, Ca, Cl, Co, Cr, Cu, Er, F, Fe, Ge, H, He, Hf, In, Ir, K, Mg, Mn, Mo, N, Na, Nb, Ni, O, P, Pb, Pt, Rb, Sb, Se, Si, SiH3, Sn, Ti, V, Yb and Zn with regard to bulk diffusion, Ag, Au, Ba, Cl, Cu, Er, F, Ga, Ge, In, O, Pb, Sb, Si, SiH3, Sn and Y with regard to surface diffusion, H with regard to grain-boundary diffusion, and self-diffusion in liquid Si.

Description: This volume is available electronically only. Please refer http://www.scientific.net/jmnm

Description: The present textbook treats the effects of temperature upon weakly disordered hydrogenated amorphous silicon and hydrogenated amorphous germanium, as well as the effect of weak disorder upon more complex systems such as GaAs and Al2Gal-xAs alloy. The effects of disorder-induced band tailing upon deep levels in compound semiconductor alloys are also studied.

Description: At the present time, Si-based technology is undergoing a transition to the next generation of substrates, having a diameter of 300 mm. The fundamental physical limits are being approached in terms of miniaturization, increased chip area, faster switching speeds, and diversity of operations. This raises the question of the intrinsic limits of the currently predominant semiconductor, silicon, and of those circumstances where it may be advantageous to turn to materials such as GaAs, InP, or SiC.

Description: Defect and Diffusion Forum Vols. 111-112