Description: During the last 25 years, the behavior of donors in III-V alloys has been the subject of a very extensive research effort. The research emphasis on AlGaAs compounds is motivated by the industrial importance of AlGaAs/GaAs heterojunction based devices. As seeing it now, "the DX center problem", the behavior of donors in III-V alloys, has shown to be unexpectedly difficult to understand. To determine the microscopic nature of the DX center is still a challenging problem.

Defect and Diffusion Forum Vols. 113-114

Edited by: Dr. David J. Fisher

Online since: January 1994

Description: Journal Issue

Defect and Diffusion Forum Vols. 106-107

Edited by: Dr. David J. Fisher

Online since: January 1994

Description: Journal Issue

Defect and Diffusion Forum Vols. 109-110

Edited by: Dr. David J. Fisher

Online since: January 1994

Description: Defect and Diffusion Forum Vol. 109-110

Defects in Semiconductors I

Edited by: Nickolay T. Bagraev

Online since: January 1993

Description: This volume focuses on current theoretical and experimental investigations of defects in III-V and II-VI compounds, silicon, germanium, Si-Ge alloys, and amorphous semiconductors. The discussions also address the metastability and superconductivity induced by point defects, dislocations and processing in semiconductors.
An important feature of this book are the special papers on defects in SiC and IV-VI compounds, and the contributions on hot topics such as nonequilibrium diffusion, negative-U defects and several new techniques.

Defects in Semiconductors 16

Edited by: Gordon Davies, G.G. DeLeo and M. Stavola

Online since: January 1992

Description: Part 1. 1. Hydrogen in Elemental Hosts . 2. Transition Metal Impurities in Elemental Hosts . 3. Impurities in Elemental Hosts . 4. Irradiation Defects in Elemental Hosts . 5. Oxygen in GaAs, Si and Ge . 6. Theory . Part 2 . 7. Hydrogen in Compound Semiconductors . 8. Rare Earth Impurities in Silicon and Compound Semiconductors . 9. Transition Metal Impurities in Compound Semiconductors . 10. Donors in Compound Semiconductors . 11. EL2 And Anti-Site Related Defects . 12. Other Defects in III-V Semiconductors . 13. Growth Defects . Part 3 . 14. New Techniques . 15. Defects in SiC and Diamond . 16. Defects in II-VI Semiconductors . 17. Hetero-Epitaxy and Strained Layers . 18. Dislocations . 19. Superlattices . 20. Defects at Surfaces and Interfaces and in Low-Dimensional Structures . 21. Processing-Induced Defects . 22. Effects of Defects on Devices .

Chaos and Stability in Defect Processes in Semiconductors

Edited by: I.V. Verner, N.N. Gerasimenko and J.W. Corbett

Online since: January 1992

Description: The book introduces a new scientific ideology for known phenomena, and the authors show how some results of radiation physics of semiconductors, for example processes of disordering and amorphization, can be considered from a synergetics point of view, and how one can apply these concepts and mathematical tools to derive completely new insights.

Epitaxial Crystal Growth

Authors: E. Lendvay

Online since: January 1991

Description: The importance of epitaxial growth has grown substantially since the early application of semiconductor systems. At present metals, high Tc superconductors, garnets, optical materials and numerous systems grown epitaxially are known.

Shallow Impurities in Semiconductors IV

Edited by: Gordon Davies

Online since: January 1991

Description: I. TECHNIQUES . II. d DOPING . III. QUANTUM WELLS . IV. HYDROGEN IN SEMICONDUCTORS . V. BOUND EXCITONS . VI. IMPURITIES IN SILICON . VII. IMPURITIES IN Ge AND GexSi1-x. VIII. IMPURITIES IN COMPOUND SEMICONDUCTORS . IX. DX CENTRES .

Surface Morphology of Crystalline Solids

Edited by: K. Sangwal and R. Rodriguez-Clemente

Online since: January 1991

Description: The book covers all aspects of the micromorphology of as-grown, etched, abraded and lapped, and fractured surfaces of single and polycrystalline solids, and glasses of as diverse substances as insulators, semiconductors, metals and polymers.