Books by Keyword: Stress

Description: This fifth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2001 to mid-2002. The scope of this coverage again includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics" series. However, the invited papers this time deal exclusively with staple semiconducting materials: including work on interstitial clusters, intrinsic point defects, and {113} defects in silicon; defect states in InAs quantum dots and defect generation at ZnSe/GaAs interfaces. There are also papers treating a wide range of general themes: such as tracer diffusion in a concentrated lattice gas, defect luminescence in layered chalcogenide semiconductors, defect formation after laser thermal processing, redistribution of point defects in an inhomogeneous temperature field, and very general mathematical techniques for determining basic diffusion parameters.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
There is now a tremendous worldwide interest in functional biomaterials. The present book covers the major aspects of the field. It is divided into four parts. The first section (A) covers various aspects of joint replacement. Section B presents the topic of dental ceramics, while Section C describes the microstructural aspects of biomaterials. Finally, some of the recent innovations in biomechanics are discussed (Section D), together with some features of bioengineering.

Description: The third annual retrospective of the latest results in the field of defects and diffusion in semiconductors covers the period from mid-1999 to mid-2000. As usual, the coverage also includes, in addition to 'traditional' semiconductors, the more important of the nitride and silicide semiconductors.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Materials, as utilized, experience the effect of residual, internal stresses, as these are the outcome of the material synthesis and/or engineering, and/or application in practice. Understanding and control of residual stresses is a prerequisite for successful application of materials in wide ranging areas as corresponding to, e.g., the microelectronic industry (thin films) and the automotive industry (crankshafts).

Description: The phenomena of grain boundary diffusion and grain boundary segregation play major roles in determining the properties and behavior of a wide variety of materials. Even though the basic principles have been known for a long time, the field continues to yield a number of very challenging questions.

Description: Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Significant advances in materials technology have been made in recent years, by both university and industrial research laboratories. It is of great importance that there should be free transfer of information and technology between the research laboratory, industry, and marketplace. Such transfer and dissemination is promoted by Frontiers for Engineering Materials.

Description: The problem of the interrelationship between diffusion and stresses is as old as the investigation of diffusion itself. Crack formation during surface oxidation, stress-induced diffusion (creep, Gorsky-effect) and the macroscopic deformation of diffusion couples during interdiffusion are well-known classical examples.

Description: The development of porous ceramic materials has presented a new challenge to various industries, because porous ceramics are more durable in severe environments and their surface characteristics permit them to satisfy very specific requirements.

Description: Journal issue