Books by Keyword: Wafer

Description: This book aims to provide a comprehensive overview of the latest breakthroughs in Silicon Carbide (SiC) and related materials for the development of advanced solid-state electronics. Its scope systematically covers the entire semiconductor value chain, beginning with bulk and epitaxial growth, followed by rigorous defect evaluation and material characterization. Furthermore, the compiled research highlights critical advancements in dielectrics, interface engineering, and the design of high-performance SiC power devices. Reflecting the expanding horizons of the field, the content also explores emerging SiC-based quantum applications alongside thorough assessments of power module robustness and reliability. Ultimately, this collection serves as an essential resource for researchers and engineers dedicated to driving innovation in wide-bandgap semiconductors. All articles compiled in this edition were presented at the 22nd International Conference on Silicon Carbide and Related Materials (ICSCRM, 14–19 September 2025, Busan, Korea).

Description: This special edition focuses on scientific principles and the technologies that underpin the preparation and processing of SiC wafers. The technological operations involved in transforming a bulk SiC crystal into a device-ready substrate are described. The presented information will contribute to continued advances in manufacturing and the development of the next generation of high-performance electronic devices.

Description: This special edition addresses the scientific and technological foundations underlying the production of silicon carbide crystals and device-quality epitaxial films. Bulk crystal growth techniques, particularly physical vapour transport, are discussed with emphasis on technological control, defect reduction, polytype stability, and process optimisation, all of which affect final device performance and reliability. The edition will serve as a valuable resource for researchers, engineers, and students working in semiconductor materials and technologies.

Description: This special edition aims to serve as a valuable resource for researchers and engineers engaged in developing and producing advanced semiconductor power devices. The publication provides readers with a balanced view of this field's scientific foundations and applied methodologies.

Description: The presented book includes articles on research results in the area of semiconductors based on silicon carbide, gallium nitride and related materials that are widely used today for the production of power solid-state electronic devices. The recent technologies of crystal growth and wafer production and processing techniques, properties of completed semiconductor solid-state structures and devices circuitry, including their applications in sensors, mechatronics, and quantum systems, are explored and analysed in this edition. The book will be valuable to engineers and researchers whose activity is related to the development and production of solid-state electronics. The collected here articles were presented at the 20th International Conference on Silicon Carbide and Related Materials (ICSCRM 2023, 17-22 September 2023, Sorrento, Italy).

Description: Advanced semiconductor technologies have been making significant advancements through the creation and application of new materials and processes that surpass traditional silicon's limitations. The wide-bandgap semiconductors such as Silicon Carbide and Gallium Nitride offer unprecedented opportunities for advancements in high-power and high-frequency microelectronic devices. The presented special edition will be useful to engineers and researchers whose activity is related to technologies of semiconductor structures growth for power electronics and microelectronics devices production.

Description: This special collection examines the intrinsic properties of semiconductor wafers and substrates, their mechanical, electrical, and thermal characteristics, and also the latest developments in SiC wafer production and processing, substrate preparation, and their integration into high-tech products which are critical to the functionality and reliability of modern electronic devices. By bringing together research and practical insights, the special edition will be a valuable resource for scientists and industry specialists seeking to harness the full potential of silicon carbide in the evolving landscape of innovation in semiconductor technologies.

Description: This proceedings volume contains the proceedings of all presentations of the 16th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) 2023. The subject matter of the UCPSS symposium is ultra-clean processing, isotropic selective etching and surface preparation technology in all steps of the fabrication of micro-and nano-electronic integrated circuits. This volume describes the recent progress in the field of ultra clean surfaces, surface cleaning and preparation for the production of micro- and nano-electronic integrated circuits and related subjects. This involves a wide variety of surfaces of mixed composition and with nano-topography. The goal of the processes is to obtain nano precise etching and cleaning resulting in ultra clean surfaces with a very high degree of perfection, i.e. with minimal amounts of residues or defects. This comprises different surface and cleaning steps throughout the entire device manufacturing process.

Description: The International Conference on Silicon Carbide and Related Materials (ICSCRM) is the most important technical conference series on silicon carbide (SiC) and related materials. Started in Washington, D.C. in 1987, the conference series developed into a bi-annual global forum on SiC from its crystal growth to the reliability in application. After five conferences in the U.S., ICSCRM has been held every two years, alternating between USA, Europe, and Japan. The last three Conferences were held in Giardini Naxos, Italy (2015), Washington, D.C. , USA (2017), and Kyoto, Japan (2019). Due to the pandemic situation in 2020 and 2021, the alternating European edition, the 13th ECSCRM, has been held in 2021, and the 19th ICSCRM has been postponed to 2022. The 19th edition of ICSCRM will be the last of its kind – starting in 2023, the conference series will be united with the European edition. It will form an annual event under the well-established name ICSCRM and a new rotation schedule integrating the SiC communities worldwide.

Description: The presented special edition is devoted to the latest research in semiconductor materials and devices on silicon carbide and the design and research of machines and equipment. This issue will be helpful to specialists engaged in the design and production of power electronics and to mechanical engineers.