Books by Keyword: Wet Cleaning

Description: This volume contains the proceedings of 13^th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS 2016, Knokke, Belgium, September 12-14, 2016) (www.ucpss.org) and includes studies on cleaning such as particle removal using acoustic enhancement, removal of metallic contamination, pattern collapse of fine flexible and fragile features, wetting and drying issues, control and measuring of contamination . FEOL and BEOL topics cover: chemistry of semiconductor surfaces, cleaning related to new gate stacks, cleaning at the interconnect level, selective wet etching, resist strip and polymer removal, cleaning and contamination control for various new materials and cleaning after Chemical-Mechanical-Polishing (CMP).

Description: Collection of selected, peer reviewed papers from the 12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), September 21-24, 2014, Brussels, Belgium.
The 71 papers are grouped as follows:
Chapter 1: Cleaning for FEOL Applications,
Chapter 2: Cleaning for FEOL Applications: Beyond-Si Active Area,
Chapter 3: Wet Etching for FEOL Applications,
Chapter 4: Wet Processing of High Aspect Ratio Structures,
Chapter 5: Fluid Dynamics, Cleaning Mechanics,
Chapter 6: Photo Resist Performance and Rework,
Chapter 7: Cleaning for BEOL Interconnect Applications,
Chapter 8: Cleaning for 3D Applications,
Chapter 9: Contamination Control and AMC,
Chapter 10: Cleaning and Wet Etching for Semiconductor Photo-Voltaic Cells

Description: The International Symposium on Ultra-Clean Processing of Semiconductor Surfaces (UCPSS) is a bi-annual conference which has been organized by IMEC since 1992.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The scope of the symposium includes all issues related to contamination, cleaning and surface preparation in mainstream large-scale Integrated Circuit manufacture. At first, silicon was typically the main semiconductor of interest. As other semiconducting materials such as SiGe, SiC, Ge and III-V compounds came under consideration for future devices, the scope was broadened so as to include these materials. Parallelling the fast-moving CMOS industry, the photovoltaic industry has also recognized the need to make improvements in cleaning. Moreover, in order to promote these semiconductor cleaning activities in PV, it was decided to add a special session focused on this topic.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The contents of this publication include every conceivable issue related to contamination, cleaning and surface preparation during mainstream large-scale integrated circuit manufacture. Typically, silicon is used as the main semiconductor substrate. However, other semiconducting materials such as SiGe and SiC are currently being used in the source-sink junction areas, and materials such as Ge and III-V compounds are being considered for the transistor channel region of future-generation devices.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This collection of 86 peer-reviewed papers covers all aspects of the use of ultra-clean technology for large-scale integration on semiconductors, and cleaning and contamination-control in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processing.

Description: The proceedings of the Fourth International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS '98) cover all aspects of ultra-clean Si-technology: cleaning, contamination control, Si-surface chemistry and topography, and its relationship to device performance and process yield. New areas of concern include: cleaning at the interconnect level, resist strip and polymer removal (dry and wet), cleaning and contamination aspects of metallization, wafer backside cleaning and cleaning after Chemical-Mechanical-Polishing (CMP).