The issues addressed by the Sixth International Symposium on the Ultra Clean Processing of Silicon Surfaces included all aspects of ultra-clean Si-technology, cleaning and contamination control in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processing.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
This covered studies of Si-surface chemistry and topography and its relationship to device performance and process yield, cleaning in relationship to new gate stacks, cleaning at the interconnect level, resist stripping and polymer removal, cleaning and contamination control of various new materials, wafer backside cleaning and cleaning following Chemical-Mechanical-Polishing (CMP).

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Info:

eBook:

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ToC:

Table of contents

Editors:

Marc Heyns, Dr. Paul W. Mertens and Marc Meuris

DOI:

https://doi.org/10.4028/b-2ilzyW

THEMA:

TGM

BISAC:

TEC021000

Keywords:

Clean, Complex Agent, Contamination, Copper (Cu), Diffusion, Etching, High-k, Megasonics, Metal Contamination, Single Wafer

Details:

Proceedings of the 6h International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS 2002), Held in Ostens, Belgium, September 2002

Pages:

320

Year:

2003

ISBN-13 (softcover):

9783908450788

ISBN-13 (CD):

9783035709360

ISBN-13 (eBook):

9783035707205

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