Papers by Keyword: Chemical Bath Deposition

Abstract: Thin films of pure and iron doped MnS, have been deposited on glass substrates using a straightforward and cost-effective technique named Chemical Bath Deposition (CBD). The temperature of the heating water bath was maintained at 90°C for three hours of deposition. Deposition is done by varying the doping concentration of Fe from 0 to 10%. Manganese chloride, iron chloride tetrahydrate, urea, and thioacetamide were the precursors employed in this work. The X-ray diffraction method was used to ascertain the thin film's structural properties. Using the Scherrer formula, the average crystallite size for an undoped MnS thin film was observed to be 30.28 nm and is decreased to 24.02 nm for 4% of Fe doping. For an undoped MnS thin film, the values of dislocation density and material strain were 1.09× 10⁻³(𝑛𝑚)⁻² and 3.418× 10⁻³, respectively. These values were increased to 1.73× 10⁻³(𝑛𝑚)⁻² and 4.65× 10⁻³, respectively due to decrement in the crystallite size. Grain size and morphology were examined using Scanning Electron Microscopy (SEM). Micrographs of samples were obtained at different magnifications and their values were noted as 0.9 μm for pure and 4.69 μm for 4% Fe doped thin films. Optical properties were determined using DRS method. The energy band gap was found as 2.21 eV for pure samples and it was decreased to 2.14, 2.09, 1.98, 1.96 and 1.93 eV for 2, 4, 6, 8 and 10% iron doping, respectively. Solar cells, solar selective coatings, sensors, optical mass memory, and anti-reflection coatings have all made substantial use of MnS thin films.

Abstract: In the present work, Zinc oxide Nanorods (ZnO NRs.) was prepared by using the chemical bath method and separating the resulting precipitate by centrifugation. The most important physical properties of nanorods such as optical, morphological and structural properties were diagnosed and studied by "X-ray diffraction (XRD), field-emission scanning electron microscope (FE-SEM), energy dispersive X-ray (EDX), as well as UV-visible spectroscopy". The results of XRD showed that the prepared material has a hexagonal crystal structure and is of high purity, as there are no peaks due to impurities. The formation of zinc oxide was also proven by means of EDX, the weight ratio of zinc and oxygen was 85% and 15%, respectively. The energy gap of prepared rods was equal 3.3 eV.

Abstract: The present article deals with synthesis of CdS thin films using cost effective chemical bath deposition method and study effect of annealing over the structural properties using X-ray diffraction pattern (XRD). The XRD pattern revealed shift in peak position and variation in intensity upon annealing at different temperatures; this may be attributed to annealing assisted modifications in composition of the thin films. The as deposited CdS thin films represents peaks corresponding to (002), (101), (111) and (110) which in case of annealed samples at 200 and 400oC get modified and slightly shifted with rising some new peaks corresponding to (200) and (001) respectively. The crystallite size of the CdS thin films upon annealing is observed to be increased this may be co-related to the fact energy induced grain growth.

Abstract: The chemical bath deposition method was employed to prepare Ag₂O films at specific preparation conditions. Silicon substrate with different conductivity was used to study their effect on the electrical and photovoltaic properties of the prepared devices. The current-voltage properties reveal that the ideality factor was (2.4 and 3.36) for psi and n-si substrate respectively. The obtained device efficiency is 0.35 while maximum detectivity was 0.3 cm.Hz^1/2W^-1.

Abstract: In this study, PbS thin films were produced at a low temperature such as 15Co using the chemical bath deposition (CBD) method.0.0085 M Pb (NO3)2 and 0.1460 M NaOH were dissolved in 100ml deionized water. 0.510 M thiourea which would be added to the solution was divided into 10 portions and added at zero, two, four, six and eight-minute intervals. Structural analysis of the obtained samples was carried out from XRD patterns which showed a significant increase in the peak intensity of the films obtained by adding thiourea at intervals of four and six minutes. The surface morphologies of the films were analyzed using a scanning electron microscope. According to the SEM images, when thiourea was added to the solution at intervals of four minutes, no cracks and holes were formed on the surfaces of the films obtained.

Abstract: Cd_xPb_1-xS films with a thickness of 620 and 680 nm were prepared by chemical precipitation from a reaction mixture containing lead salt, thiourea, alkali and cadmium acetate. The concentration of cadmium acetate was 0.01 and 0.1 mol/l. Electron-microscopic studies showed a fundamental difference in the morphology of the Cd_xPb_1-xS thin films with a 10-fold difference in the concentration of cadmium acetate in the reaction bath. The results of energy dispersive analysis indicate the nonstoichiometry of the synthesized films on sulfur. Auger spectrometry revealed a high content of oxygen in the surface layer of the thin film coating Cd_xPb_1-xS (up to 10 and 40 at. %). In the sample obtained from the reaction bath containing 0.01 mol / l of cadmium acetate, after ion etching at a depth of more than 30 nm, no oxygen was detected. In a sample prepared with a cadmium acetate content of up to 0.1 mol/l, the oxygen content does not exceed 3 at. %

Abstract: Lead sulfide films doped with cadmium and iodine ions were obtained by chemical bath deposition from the reaction mixture with thiourea that have thickness of up to 300 nm. An increase in cadmium iodide in the reactor from 5∙10^-5 to 5∙10^-3 mol/l is accompanied by a decrease in the period of the B1 cubic crystal lattice (space group ) from 0.59368 to 0.59355 nm, due to the replacement of Pb²⁺ ions in the PbS crystal lattice by a smaller size of ion Cd²⁺. The cadmium content in the synthesized layers varied from 0.4 to 2.8 at.% with a constant iodine concentration of 1.7–1.9 at.%. An electron microscopic study of the structure showed a decrease in the average crystallite size from 260 nm to 80 nm.

Abstract: This study involves synthesizing of nanostructured tin sulphide (SnS) thin film on a glass substrate by chemical bath deposition technique. SnS film was prepared using non-toxic trisodium citrate (TSC) as a complex agent. The structural and morphological characteristics of the film were characterized by using X-ray diffraction (XRD), optical field emission scanning electron microscopy (FESEM). The XRD pattern confirmed an orthorhombic structure. The FESEM image revealed nanoflakes of the as-prepared SnS thin film. Moreover, near-infrared (NIR) metal semiconductor metal photodetector, which exhibited good photoresponse characteristics under (750 nm) light illumination was fabricated. The photoresponse characteristics also were investigated at different illumination power densities. The photodetector revealed excellent reproducibility and stability characteristics.

Abstract: In this study, Zinc Oxide (ZnO) microstructures were grown on porous silicon (PS) using chemical bath deposition (CBD) method by varying the growth time. The field emission scanning electron microscopy (FESEM) revealed the morphology and sized of ZnO. The X-ray diffraction (XRD) spectra indicate the high quality growth of ZnO on PS surface. Raman analyses revealed the peaks shift of E₂(High), characterized wurtzite lattice and indicates good crystallinity of ZnO.

Abstract: The growth of vertically aligned ZnO Nanorods arrays using Zinc Nitrate hexahydrate and Hexamethylene Tetramine (HMTA), by Chemical Bath Deposition on Silicon Wafer was investigated. The growth is conducted under influence of Ethane-1,2-diamine, the amine based enhancer was evaluated based on three different ratios (1:0.5, 1:1, 1:1.5) of enhancer to the precursor (Zinc Nitrate and HMTA). The effect different ratios of enhancers on morphology aspect ratio and crystallinity of the as grown Nanorods were studied under Scanning electron microscope (SEM) and X-ray powder diffraction (XRD). Electrical Properties such as current–voltage characteristics were investigated, its correlation to the morphology and aspect ratio of the Nanorods in the presence of 100μL-500μL of Aromatic Compound Cyclohexane and at different applied voltages.