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Characterization of Cu-BTA Organic Complexes on Cu during Cu CMP and Post Cu Cleaning

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Abstract:

Although copper have better electrical properties than aluminum such as low resistivity and high electro-migration resistivity, aluminum has been used as an interconnect material due to the difficulty in Cu dry etching. Since CMP process has been adapted to the semiconductor fabrication, Cu became the choice of materials for interconnection. However, copper CMP process introduces new defects on the surface such as slurry particle, organic residue, scratch and corrosion [1].

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Info:

Periodical:

Solid State Phenomena (Volume 219)

Pages:

205-208

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.219.205

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Online since:

September 2014

Authors:

Byoung Jun Cho, Jin Goo Park*, Shohei Shima, Satomi Hamada

Keywords:

Contact Angle, Cu-BTA Complex, Cupric Oxide, Cuprous Oxide, Electrochemical Impedance Spectroscopy

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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References

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