TiN Metal Hardmask Residue Removal Formulation Development for Advanced Porous Low-K and Cu Interconnect Application

Hua Cui

doi:10.4028/www.scientific.net/SSP.219.217

Paper Titles

Post Etch Residue Removal and Material Compatibility in BEOL Using Formulated Chemistries
p.201

Characterization of Cu-BTA Organic Complexes on Cu during Cu CMP and Post Cu Cleaning
p.205

TiN Hard Mask Cleans with SC1 Solutions, for 64nm Pitch BEOL Patterning
p.209

Industrial Challenges of TiN Hard Mask Wet Removal Process for 14nm Technology Node
p.213

TiN Metal Hardmask Residue Removal Formulation Development for Advanced Porous Low-K and Cu Interconnect Application
p.217

Prevention of Unexpected Oxidation of Metal Layer by Removing Hydrogen Peroxide from Ultrapure Water and Diluted Hydrofluoric Acid
p.221

Cost-of-Ownership Comparison of Single-Wafer Processes for Stripping Copper Pillar Bump Photomasks
p.225

The Role of Mass Transfer in Removal of Cross-Linked Sacrificial Layers in 3DI Applications
p.233

Scaling the 3D Bumps Pitch from 20 to 10 μm, Focusing on the Wet Cu Seed Etch Process Development
p.237

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TiN Metal Hardmask Residue Removal Formulation Development for Advanced Porous Low-K and Cu Interconnect Application

Abstract:

TiN metal hardmask has been used to improve etch selectivity to low-k materials and thereby gain better profile control. For 14 nm and smaller technology nodes, it is required that the TiN hardmask is completely removed in order to improve the aspect ratio for subsequent reliable metal deposition. Thus, a chemical cleaning formulation with high TiN etch selectivity toward Cu and low-k is required.