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Selective Nickel Platinum Removal without Titanium Nitride Metal Gate Corrosion
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Roughness and Uniformity Control during Wet Etching of Molybdenum
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Selective Ru or Co Etch for 3nm Applications

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Abstract:

Selective Cobalt (Co) and Ruthenium (Ru) etch chemistries are developed to provide controlled etch options with various metallization, including Al, Cu, W, Co, Ru, TiN and TaN. The pH effects on Co, Cu and W etching are reported. Diluted acids, such as 1% HF and 1% HCl, demonstrate etch rate profiles suitable for selective Co vs. W etch applications. Ru etch chemistries are alkaline oxidative based and expanded to meet 3 nm and below integration needs. Versatile applications include highly boosted Ru etch rates for thermally annealed Ru layers and TiN compatible WNx or WCN selective etching at ultra-dilutions.

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Periodical:

Solid State Phenomena (Volume 314)

Pages:

307-311

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.314.307

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Online since:

February 2021

Authors:

Chien Pin Sherman Hsu*, Polly Yi Ting Chen

Keywords:

Co Clean, Co Etch, Cu and Al Compatible Ru Etch, Interconnect Alternative, Ru Etch, Selective Co Etch vs. W, Selective W Etch vs. TiN

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© 2021 Trans Tech Publications Ltd. All Rights Reserved

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References

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