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Theoretical Monte Carlo Study of the Formation and Evolution of Defects in the Homoepitaxial Growth of SiC
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Investigation of Triangular Defects in 4H-SiC 4° Off Cut (0001) Si Face Epilayers Grown by CVD
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Theoretical Monte Carlo Study of the Formation and Evolution of Defects in the Homoepitaxial Growth of SiC

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Abstract:

A novel Monte Carlo kinetic model has been developed and implemented to predict growth rate regimes and defect formation for the homo-epitaxial growth of various SiC polytypes on different substrates. Using this model we have studied the generation of both point like and extended defects in terms of the growth rate and off-cut angle, finding qualitative agreement with both electrical and optical characterization and analytical results.

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Periodical:

Materials Science Forum (Volumes 600-603)

Pages:

135-138

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.600-603.135

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Online since:

September 2008

Authors:

Massimo Camarda, Antonino La Magna, Patrick Fiorenza, Gaetano Izzo, Francesco La Via

Keywords:

Atomic Force Microscope (AFM), Computer Simulation, Defect, Growth Model, Surface Structure

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© 2009 Trans Tech Publications Ltd. All Rights Reserved

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DOI: 10.4028/www.scientific.net/msf.600-603.123

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