Paper Titles
Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs
p.1261
4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal
p.1265
Optimum Design of Short-Channel 4H-SiC Power DMOSFETs
p.1269
Realization of Large Area Vertical 3C-SiC MOSFET Devices
p.1273
High Power-Density 4H-SiC RF MOSFETs
p.1277
4.3 mΩcm2, 1100 V 4H-SiC Implantation and Epitaxial MOSFET
p.1281
Fabrication and Performance of 1.2 kV, 12.9 mΩcm2 4H-SiC Epilayer Channel MOSFET
p.1285
Switching Characteristics of SiC-MOSFET and SBD Power Modules
p.1289
Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls
p.1293

High Power-Density 4H-SiC RF MOSFETs

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Abstract:

We have made a 4H-SiC RF power MOSFETs with cutoff frequency up to 12 GHz, delivering RF power of 1.9 W/mm at 3 GHz. The transistors withstand 200 V drain voltage, are normally-off, and show no gate lag, which is often encountered in SiC MESFETs. The measured devices have a single drain finger and a double gate finger and a total gate width of 0.8 mm. To our knowledge this is the first time that power densities above 1 W/mm at 3 GHz are reported for SiC MOSFETs.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

1277-1280

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1277

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Online since:

October 2006

Authors:

G. Gudjónsson, Fredrik Allerstam, H.Ö. Ólafsson, Per Åke Nilsson, Hans Hjelmgren, Kristoffer Andersson, E.Ö. Sveinbjörnsson, Herbert Zirath, T. Rödle, R. Jos

Keywords:

4H-SiC, High Power, High-Frequency, RF MOSFET

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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References

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