Paper Titles
First Demonstration of 2.1 kW Output Power at 425 MHz Using 4H-SiC RF Power BJTs
p.1413
1836 V, 4.7 mΩ•cm2 High Power 4H-SiC Bipolar Junction Transistor
p.1417
4H-SiC Bipolar Transistors with UHF and L-Band Operation
p.1421
Current Gain Dependence on Emitter Width in 4H-SiC BJTs
p.1425
Optimization of the Specific On-Resistance of 4H-SiC BJTs
p.1429
Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors
p.1433
High Temperature Characterization of 4H-SiC Bipolar Junction Transistors
p.1437
Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs
p.1441
400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200°C Baseplate Temperature
p.1445

Optimization of the Specific On-Resistance of 4H-SiC BJTs

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Abstract:

We evaluate the performance capabilities and limitations of high voltage 4H-SiC based Bipolar Junction Transistors (BJTs). Experimental forward characteristics of a 4kV BJT are studied and simulations are employed to determine the factors behind the higher than expected specific onresistance (Ron,sp) for the device. The impact of material (minority carrier lifetimes), processing (surface recombination velocity) and design (p contact spacing from the emitter mesa) parameters on the forward active performance of this device are discussed and ways to lower Ron,sp, below the unipolar level, and increase the gain (β) are examined.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

1429-1432

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1429

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Online since:

October 2006

Authors:

S. Balachandran, T. Paul Chow, Anant K. Agarwal

Keywords:

4H-SiC, Bipolar Junction Transistor (BJT), Current Gain, Minority Carrier Lifetime, Specific On-Resistance, Surface Recombination Velocity

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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References

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