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Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates
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Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates

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Abstract:

Thick epitaxial layers of 4H-SiC both n- and p-type were grown using horizontal Hot- Wall CVD (HWCVD). No large difference in the carrier lifetime was observed for the layers grown on n- and p-type substrates. The carrier lifetime usually increases with the increasing thickness of the epilayer. To investigate if the growth conditions and material properties are changing during the longer growth time a sample was prepared with uniformly varying epilayer thickness from 20μm on one side to 110μm on other side. Results of optical and electrical measurements, the variation in background impurities and other deep levels are discussed. Furthermore, the properties of thick layers grown on on-axis substrates are presented.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

183-186

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.183

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Online since:

October 2006

Authors:

Jawad Hassan, Christer Hallin, Peder Bergman, Erik Janzén

Keywords:

Carrier Lifetime, DLTS, Epitaxial Growth, Hot-Wall CVD, Photoluminescence (PL)

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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