Paper Titles
Investigation of the Mechanism and Growth Kinetics of Homoepitaxial 4H-SiC Growth Using CH3Cl Carbon Precursor
p.171
Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor
p.175
SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor
p.179
Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates
p.183
High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD
p.187
Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition
p.191
Highly Uniform SiC Epitaxy for MESFET Fabrication
p.195
Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization
p.199
High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH3SiH3 and C3H8 Sources
p.203

High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD

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Abstract:

A 4H-SiC epitaxial growth process has been developed in a horizontal hot-wall CVD reactor using a standard chemistry of silane-propane-hydrogen, producing repeatable growth rates up to 32 μm/h. The growth rate was studied as a function of pressure, silane flow rate, and growth time. The structural quality of the films was determined by X-ray diffraction. A 65 μm thick epitaxial layer was grown at the 32 μm/h rate, resulting in a smooth, specular film morphology with occasional carrot-like and triangular defects. The film proved to be of high structural quality with an X-ray rocking curve FWHM value of the (0004) peak of 11 arcseconds.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

187-190

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.187

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Online since:

October 2006

Authors:

Rachael L. Myers-Ward, Y. Shishkin, Olof Kordina, I. Haselbarth, Stephen E. Saddow

Keywords:

Chemical Vapor Deposition (CVD), Homoepitaxy, Hot-Wall CVD

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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