CONFERENCE
Silicon Carbide and Related Materials 2006
Materials Science Forum Volumes 556 - 557
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p3
Quality Aspects for the Production of SiC Bulk Crystals
[
549 K
]
Authors: Thomas L. Straubinger, Michael Rasp, Erwin Schmitt, Arnd Dietrich Weber -
p9
An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method
[
4 M
]
Authors: Jung Doo Seo, Joon Ho An, Jung Gon Kim, Jung Kyu Kim, Myung Ok Kyun, Won Jae Lee, Il Soo Kim, Byoung Chul Shin, Kap Ryeol Ku -
p13
Growth and Characterization of 13C Enriched 4H-SiC for Fundamental Materials Studies
[
176 K
]
Authors: Yeon Suk Jang, Sakwe Aloysius Sakwe, Peter J. Wellmann, Sandrine Juillaguet, Hervé Peyre, Jean Camassel, John W. Steeds -
p17
Growth and Characterization of High-Quality 6H-SiC (0115) Bulk Crystals
[
1 M
]
Authors: Octavian Filip, Boris M. Epelbaum, M. Bickermann, Albrecht Winnacker -
p21
Growth Induced Stacking Fault Formation in 4H-SiC
[
852 K
]
Authors: D. Siche, M. Albrecht, H. J. Rost, Andreas Sendzik -
p25
Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method
[
3 M
]
Authors: Jung Gon Kim, Joon Ho An, Jung Doo Seo, Jung Kyu Kim, Myung Ok Kyun, Won Jae Lee, Il Soo Kim, Byoung Chul Shin, Kap Ryeol Ku -
p29
Effect of Growth Conditions on Cubic Silicon Carbide Crystals Grown from Silicon Solution
[
211 K
]
Authors: Jessica Eid, Jean Louis Santailler, Bernard Ferrand, Guy Rolland, Michel Burdin, R. Lewandowska, Jean Camassel -
p35
Growth and Electrical Characterization of 4H-SiC Epilayers
[
323 K
]
Authors: Tsunenobu Kimoto, Katsunori Danno, T. Hori, Hiroyuki Matsunami -
p41
Growth of SiC from a Liquid Phase at Low Temperature
[
1 M
]
Authors: Gabriel Ferro, Maher Soueidan, O. Kim-Hak, François Cauwet, Yves Monteil -
p47
Thick Epilayer for Power Devices
[
2 M
]
Authors: Anne Henry, Jawul Hassan, Henke Pedersen, Franziska Beyer, J.P. Bergman, S. Andersson, Erik Janzén, Phillippe Godignon