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Shallow Impurities in Semiconductors IV

Materials Science Forum Volumes 65 - 66

• Papers
• Abstracts

• p1 Raman Spectroscopy of Dopant Impurities in Homogeneously and Planar (δ) Doped III-V Semiconductors   [ 434 K ]
  Authors: J. Wagner
• p11 Determination of Residual Donor Concentration by Selective Pair Luminescence in Semi-Insulating GaAs   [ 414 K ]
  Authors: T. Iino
• p21 Dynamics of Selectively Excited Donor Acceptor Pairs in GaAs   [ 308 K ]
  Authors: T.D. Harris, J.K. Trautman, J.I. Colonell
• p29 A New Technology of Boron Diffusion into Silicon by Rapid Thermal Processing   [ 143 K ]
  Authors: Wan Quan Shi, Qing Run Hou, Shi Xiang Liu, Xue Jun Liu, Zheng Qing Fu, Zhi Jing He, L.W. Lu
• p35 Control of Shallow Boron Profile in Silicon   [ 217 K ]
  Authors: Zhi Heng Lu, Su Jie Li, Yan Luo
• p41 Photoionization Cross-Section Spectra of Shallow Acceptors in Semiconductors: Effect of a Change in Heavy - to Light-Hole Mass Ratio   [ 271 K ]
  Authors: A.F. Polupanov, V.I. Galiev, V.E. Zhuravlev
• p47 Electron-Hole Mechanism of Migration and Defect Interaction   [ 368 K ]
  Authors: A.B. Gerasimov
• p53 Delta-Doping in III-V Semiconductors   [ 659 K ]
  Authors: E.F. Schubert, R.F. Kopf
• p67 Optical Interband Transitions in Single and Periodically Delta-Doped GaAs Samples   [ 219 K ]
  Authors: A.A. Bernussi, J.A. Brum, P. Motisuke, P. Basmaji, M. Siu Li, O. Hipólito
• p73 Photoluminescence and Excitation Study of Delta Doped GaAs   [ 236 K ]
  Authors: J.C.M. Henning, Y.A.R.R. Kessner, Paul M. Koenraad, M.R. Leys, A.P.J. Voncken, W.C. van der Vleuten, J.H. Wolter